參數(shù)資料
型號(hào): THS4302RGTR
廠商: Texas Instruments, Inc.
元件分類: 運(yùn)算放大器
英文描述: WIDEBAND FIXED-GAIN AMPLIFIER
中文描述: 寬頻帶固定增益放大器
文件頁(yè)數(shù): 2/23頁(yè)
文件大?。?/td> 602K
代理商: THS4302RGTR
www.ti.com
ABSOLUTE MAXIMUM RATING
over operating free-air temperature range unless otherwise noted
(1)
RECOMMENDED OPERATING CONDITIONS
PACKAGE DISSIPATION RATINGS
THS4302
SLOS403G–OCTOBER 2002–REVISED JANUARY 2005
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
UNIT
6 V
±
V
S
200 mA
Supply voltage, V
S
Input voltage, V
I
Output current, I
O
Continuous power dissipation
Maximum junction temperature, T
J
Maximum junction temperature, continuous operation, long term reliability, T
J(2)
Storage temperature range, T
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
See Dissipation Rating Table
150
°
C
125
°
C
-65
°
C to 150
°
C
300
°
C
(1)
The absolute maximum temperature under any condition is limited by the constraints of the silicon process. Stresses above these
ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not
implied.
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
(2)
MIN
±
1.5
MAX
±
2.5
UNIT
Dual supply
Single supply
Supply voltage, V
CC
(V
S+
and V
S-
)
V
3
5
Common-mode input voltage range
V
S-
+1
V
S+
-1
V
POWER RATING
(2)
T
A
25
°
C
3.16
PACKAGE
Θ
JC
(
°
C/W)
Θ
JA
(
°
C/W)
(1)
T
A
= 25
°
C
1.65 W
RGT (16)
(3)
2.4
39.5
(1)
(2)
This data was taken using the JEDEC standard High-K test PCB.
Power rating is determined with a junction temperature of 125
°
C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below 125
°
C for best performance and long
term reliability.
The THS4302 device may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which can permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the
PowerPAD thermally enhanced package.
(3)
AVAILABLE OPTIONS
INTERNAL FIXED GAIN
RESISTOR VALUES (+5)
R
G
50
TRANSPORTATION MEDIA,
QUANTITY
Tape and Reel, 250
Tape and Reel, 3000
PACKAGED DEVICES
PACKAGE TYPE
(1)
R
F
THS4302RGTT
THS4302RGTR
Leadless (RGT-16)
200
(1)
The PowerPAD is electrically isolated from all other pins.
2
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參數(shù)描述
THS4302RGTR 制造商:Texas Instruments 功能描述:Operational Amplifier (Op-Amp) IC
THS4302RGTRG4 功能描述:高速運(yùn)算放大器 Wideband Fixed Gain Amplifier RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
THS4302RGTT 功能描述:高速運(yùn)算放大器 Wideband Fixed Gain Amplifier RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
THS4302RGTTG4 功能描述:高速運(yùn)算放大器 Wideband Fixed Gain Amplifier RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
THS4303 制造商:TI 制造商全稱:Texas Instruments 功能描述:WIDEBAND FIXED-GAIN AMPLIFIER