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參數(shù)資料
| 型號： | TEA1096T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | Speech and listening-in IC |
| 中文描述： | TELEPHONE SPEECH CKT, PDSO28 |
| 封裝： | PLASTIC, SO-28 |
| 文件頁數(shù)： | 25/32頁 |
| 文件大小： | 390K |
| 代理商： | TEA1096T |
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November 1994
25
Philips Semiconductors
Product Specification
Speech and listening-in IC
TEA1096; TEA1096A
Notes
1.
2.
This gives the current available for receiving, listening-in and peripherals at this line current.
Both gains, microphone and sending DTMF, are determined in the same way by the resistor R
GAS
.
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
Power-down input (PD)
V
IL
V
IH
I
PD
LOW level input voltage
HIGH level input voltage
input current in power-down
condition
1.5
6
0.5
V
DD
+0.4 V
10
V
PD = HIGH
μ
A
Mute input (MUTE)
V
IL
V
IH
I
MUTE
LOW level input voltage
HIGH level input voltage
input current
1.5
15
0.3
V
DD
+0.4 V
20
V
MUTE = HIGH
μ
A
Microphone mute input (DLS/MMUTE)
V
IL
I
sink(DLS)
t
rel
LOW level input voltage
sink current
release time after a LOW level
on pin DLS/MMUTE
gain reduction when
DLS/MMUTE is short-circuited
to V
EE
60
15
0.3
100
V
μ
A
ms
DLS/MMUTE = LOW
C
DLS
= 470 nF
G
txm
DLS/MMUTE = LOW
60
80
dB
Disable input for loudspeaker amplifier (DLL/DIL)
V
IL
I
sink(DLL/DIL)
t
rel
LOW level input voltage
sink current
release time after a LOW level
on pin DLL/DIL
gain reduction when DLL is
short-circuited to V
EE
75
10
0.25
120
V
μ
A
ms
DLL/DIL = LOW
I
line
= 30 mA;
C
DDL
= 470 nF
DLL/DIL = LOW
G
lm
60
80
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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