參數(shù)資料
型號: TEA1085T
廠商: NXP SEMICONDUCTORS
元件分類: 通信及網(wǎng)絡
英文描述: Listening-in circuit for line-powered telephone sets
中文描述: SPECIALTY TELECOM CIRCUIT, PDSO24
封裝: PLASTIC, SO-24
文件頁數(shù): 17/32頁
文件大?。?/td> 199K
代理商: TEA1085T
March 1992
17
Philips Semiconductors
Preliminary specification
Listening-in circuit for line-powered
telephone sets
TEA1085; TEA1085A
Loudspeaker outputs QLS1 and QLS2
V
o(p-p)
output voltage (peak-to-peak
value)
single ended
V
i
= 22 mV(RMS)
I
SUP
= 9 mA; note 1
I
SUP
= 17 mA; note 2
I
SUP
= 23.5 mA; note 2
I
SUP
= 32 mA; note 3
V
i
= 22 mV(RMS)
I
SUP
= 9 mA
I
SUP
= 17 mA
I
SUP
= 23.5 mA
V
i
= 22 mV(RMS)
1.2
2.5
2.5
3.5
1.45
2.9
2.9
4.0
V
V
V
V
bridge tied load
THD
total harmonic distortion
single ended
0.4
0.7
0.4
2
2
2
%
%
%
bridge tied load
output voltage (peak-to-peak
value)
single ended
V
o(p-p)
I
SUP
= 17 mA;
V
SUP
V
EE
= 1 V(RMS)
1.75
2.15
V
Dynamic limiter
THD
total harmonic distortion
V
i
= 22 mV(RMS)
+
10 dB
I
SUP
= 9 mA
I
SUP
= 17 mA
I
SUP
= 23.5 mA
single ended load
single ended
0.5
1.2
0.6
10
10
10
%
%
%
bridge tied load
dynamic behaviour of limiter
attack time; V
i
jumps from
10 mV(RMS) to 65 mV(RMS)
voltage limiter
current limiter
V
BB
limiter
release time; V
i
jumps from
65 mV(RMS) to 10 mV(RMS)
threshold V
BB
limiter below
which gain reduction starts
noise output voltage
t
att
I
SUP
= 17 mA
I
SUP
= 12 mA
I
SUP
= 9 mA
I
SUP
= 17 mA
tbf
2
500
10
75
5
tbf
tbf
ms
ms
ms
ms
t
rel
V
BBO
I
SUP
= 9 mA
tbf
2.95
tbf
V
V
no(RMS)
1 k
between inputs
LSI1, LSI2;
psophometrically
weighted (P53 curve)
single ended
bridge tied load
170
350
μ
V
μ
V
Logic gain control
G
v
reduction of voltage gain
GSC2 = 0, GSC1 = 1
GSC2 = 1, GSC1 = 0
GSC2 = 1, GSC1 = 1
V
i
= 1.8 mV(RMS)
5.8
11.7
17
6.3
12.2
18
6.8
12.7
19
dB
dB
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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