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參數(shù)資料
| 型號(hào)： | TEA1085AT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | Listening-in circuit for line-powered telephone sets |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PDSO24 |
| 封裝： | PLASTIC, SO-24 |
| 文件頁(yè)數(shù)： | 18/32頁(yè) |
| 文件大小： | 199K |
| 代理商： | TEA1085AT |
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March 1992
18
Philips Semiconductors
Preliminary specification
Listening-in circuit for line-powered
telephone sets
TEA1085; TEA1085A
Larsen limiter preamplifier
operational amplifier
open-loop gain
1st pole
2nd pole
unity gain bandwidth
voltage gain
G
v0
f
p1
f
p2
G
B
G
v
51
92
120
3.3
4
52
53
dB
Hz
MHz
MHz
dB
f = 3 kHz;
R26 = 10 k
;
R29 = 4 M
G
v
gain adjustment range
30
52
dB
Larsen limiter detector
voltage to current convertor
V
DCA
-V
DTI
DC offset voltage
G
v
voltage gain from DTI to DCA
V
BB
V
DTI
= 1 V
V
DTI
= 100 mV(RMS);
f = 3 kHz
R35 = 51 k
R34 = 100 k
f = 3 kHz; see Fig.15
25
tbf
1
0.8
+
25
tbf
mV
dB
V
THL1
V
THL2
DC voltage at THL1
DC voltage at THL2
dynamic behaviour with a
burst at DTI
listen-in release time
attack delay time
V
DTI
jumps from
0 to 100 mV (RMS value)
V
DTI
jumps from
0 to 1 V (RMS value)
Larsen attack time
1.8
1.8
1.25
1.25
1.33
1.33
V
V
t
LIr
t
ad
see Fig.15(a)
see Fig.15(b)
tbf
40
tbf
ms
160
200
ms
100
120
ms
t
LAa
see Fig.15(b);
V
DTI
= 100 mV(RMS)
see Fig.15(b)
20
tbf
ms
t
LAr
Larsen release time
V
DTI
jumps from
100 mV to 0 mV (RMS
value)
DC voltage at LLC
reduction of V
LLC
to attack
Larsen mode
gain reduction
tbf
250
tbf
ms
V
LLC
V
LLC
V
DTI
= 0 V
1.75
0.59
1.9
0.63
2.0
0.68
V
V
G
v
V
LLC
= 0.7 V
60
tbf
tbf
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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