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  • 參數(shù)資料
    型號(hào): TE28F160C3
    廠商: Intel Corp.
    英文描述: 3 Volt Intel Advanced+ Boot Block Flash Memory
    中文描述: 3伏英特爾高級(jí)啟動(dòng)塊閃存
    文件頁數(shù): 24/48頁
    文件大?。?/td> 304K
    代理商: TE28F160C3
    SMART 3 ADVANCED BOOT BLOCK
    E
    24
    PRELIMINARY
    4.2
    Operating Conditions
    Symbol
    Parameter
    Notes
    Min
    Max
    Units
    T
    A
    Operating Temperature
    –40
    +85
    °C
    V
    CC1
    V
    CC
    Supply Voltage
    1
    2.7
    3.6
    Volts
    V
    CC2
    2.7
    2.85
    V
    CC3
    2.7
    3.3
    V
    CCQ1
    I/O Supply Voltage
    1
    2.7
    3.6
    Volts
    V
    CCQ2
    1.65
    2.5
    V
    CCQ3
    1.8
    2.5
    V
    PP1
    Program and Erase Voltage
    1
    2.7
    3.6
    Volts
    V
    PP2
    2.7
    2.85
    V
    PP3
    2.7
    3.3
    V
    PP4
    2, 3
    11.4
    12.6
    Cycling
    Block Erase Cycling
    3
    100,000
    Cycles
    NOTES:
    1.
    2.
    V
    CC1
    , V
    CCQ1
    , and V
    PP3
    must share the same supply when all three are between 2.7 V and 3.6 V.
    During read operations or idle time, 5 V may be applied to V
    PP
    indefinitely. V
    PP
    must be at valid levels for program and
    erase operations
    Applying V
    = 11.4 V
    –12.6 V during a program/erase can only be done for a maximum of 1000 cycles on the main blocks
    and 2500 cycles on the parameter blocks. V
    PP
    may be connected to 12 V for a total of 80 hours maximum. See Section 3.4
    for details.
    3.
    4.3
    T
    A
    = 25 °C, f = 1 MHz
    Capacitance
    Sym
    Parameter
    Notes
    Typ
    Max
    Units
    Conditions
    C
    IN
    Input Capacitance
    1
    6
    8
    pF
    V
    IN
    = 0 V
    C
    OUT
    Output Capacitance
    1
    10
    12
    pF
    V
    OUT
    = 0 V
    NOTE:
    1.
    Sampled, not 100% tested.
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