參數(shù)資料
型號(hào)： TE28F008S3-150
廠商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
中文描述： 1M X 8 FLASH 2.7V PROM, 150 ns, PDSO40
封裝： 10 X 20 MM, TSOP-40
文件頁(yè)數(shù)： 3/41頁(yè)
文件大?。?/td> 703K
代理商： TE28F008S3-150
E
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY
3
PRELIMINARY
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION .............................................5
1.1 New Features...............................................5
1.2 Product Overview.........................................5
1.3 Pinout and Pin Description...........................6
2.0 PRINCIPLES OF OPERATION .....................11
2.1 Data Protection ..........................................12
3.0 BUS OPERATION.........................................12
3.1 Read..........................................................12
3.2 Output Disable ...........................................12
3.3 Standby......................................................12
3.4 Deep Power-Down.....................................12
3.5 Read Identifier Codes Operation................13
3.6 Write ..........................................................13
4.0 COMMAND DEFINITIONS............................13
4.1 Read Array Command................................16
4.2 Read Identifier Codes Command ...............16
4.3 Read Status Register Command................16
4.4 Clear Status Register Command................16
4.5 Block Erase Command ..............................16
4.6 Program Command....................................17
4.7 Block Erase Suspend Command................17
4.8 Program Suspend Command.....................18
4.9 Set Block and Master Lock-Bit Commands 18
4.10 Clear Block Lock-Bits Command..............19
5.0 DESIGN CONSIDERATIONS........................27
5.1 Three-Line Output Control..........................27
5.2 RY/BY# Hardware Detection......................27
5.3 Power Supply Decoupling..........................27
5.4 V
PP
Trace on Printed Circuit Boards...........27
5.5 V
CC
, V
PP
, RP# Transitions .........................27
5.6 Power-Up/Down Protection........................27
5.7 V
PP
Program and Erase Voltages on Sub-
0.4μ S3 Memory Family ............................28
6.0 ELECTRICAL SPECIFICATIONS..................29
6.1 Absolute Maximum Ratings........................29
6.2 Commercial Temperature Operating
Conditions.................................................29
6.3 Capacitance...............................................29
6.4 DC Characteristics— Commercial
Temperature..............................................30
6.5 AC Characteristics—Read-Only
Operations—Commercial Temperature.....34
6.6 AC Characteristics—Write Operations—
Commercial Temperature..........................36
6.7 Block Erase, Program, and Lock-Bit
Configuration Performance—Commercial
Temperature..............................................38
6.8 Extended Temperature Operating
Conditions.................................................39
6.9 DC Characteristics—Extended
Temperature..............................................39
6.10 AC Characteristics—Read-Only
Operations—Extended Temperature.........39
7.0 ORDERING INFORMATION..........................40
8.0 ADDITIONAL INFORMATION.......................40
相關(guān)PDF資料
PDF描述
TE28F004S5-100 BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F008S5-100 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
TE28F008SA-100 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
TE28F008SC-100 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT
TE28F010-120 制造商:Intel 功能描述:
TE28F010-150 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
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