參數(shù)資料
型號: TDA8551T-T
廠商: NXP SEMICONDUCTORS
元件分類: 音頻控制
英文描述: 1 CHANNEL(S), VOLUME CONTROL CIRCUIT, PDSO8
封裝: 3.90 MM, PLASTIC, MS-012, SOT96-1, SOP-8
文件頁數(shù): 18/18頁
文件大?。?/td> 160K
代理商: TDA8551T-T
1998 Feb 23
9
NXP Semiconductors
Product specification
1 W BTL audio amplifier with digital volume
control
TDA8551
When a practical PCB layout is used with wider copper
tracks and some extra copper added both to the IC pin
connections and underneath the IC, the thermal resistance
from junction to ambient can be reduced. Without these
measures Rth j-a = 160 K/W for the SO8 package; see
Chapter “Thermal characteristics”. The power dissipation
can be calculated as follows:
For a maximum ambient temperature of 50
°C, V
P =5V
and RL =8 Ω this results in a worst case sine wave
dissipation of 0.63 W.
Figures 5 to 15 represent test results obtained while using
the test circuit given in Fig.4. The following test conditions
apply: Tamb =25 °C; VP =5V; f= 1kHz; RL =8 Ω;
Gv = 20 dB; audio bandwidth from 22 Hz to 22 kHz
(except for Figs 8 and 9); unless otherwise specified.
P
T
amb
R
th j-a
--------------
=
Fig.5
Supply current as a function of supply
voltage.
handbook, halfpage
024
6
10
0
8
6
4
2
MGM554
VP (V)
IP
(mA)
Fig.6
Total harmonic distortion as a function of
output power at different frequencies.
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
handbook, halfpage
10
101
1
102
MGM551
102
101
110
Po (W)
THD
(%)
(3)
(2)
(1)
Fig.7
Total harmonic distortion as a function of
output power at different gains.
f= 1kHz.
(1) Gv =0dB.
(2) Gv =7dB.
(3) Gv =20 dB.
handbook, halfpage
10
101
1
102
MGM552
102
101
110
Po (W)
THD
(%)
(1)
(2)
(3)
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