
June 2004 / C
Page 1
SEMICONDUCTOR
TAK CHEONG
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Parameter
Value
Units
Power Dissipation
500
mW
Storage Temperature Range
-65 to +200
°C
Operating Junction Temperature
+200
°C
Lead Temperature (1/16” from case for 10 seconds)
+230
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.4 to 56 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
Electrical Characteristics
TA = 25°C unless otherwise noted
Device Type
VZ @ IZT
(Volts)
Nominal
IZT
(mA)
ZZT @ IZT
(
)
Max
ZZK @ IZK = 0.25mA
(
)
Max
IR @ VR
(
A)
Max
VR
(Volts)
TC1N5221B
2.4
20
30
1200
100
1
TC1N5222B
2.5
20
30
1250
100
1
TC1N5223B
2.7
20
30
1300
75
1
TC1N5224B
2.8
20
30
1400
75
1
TC1N5225B
3
20
29
1600
50
1
TC1N5226B
3.3
20
28
1600
25
1
TC1N5227B
3.6
20
24
1700
15
1
TC1N5228B
3.9
20
23
1900
10
1
TC1N5229B
4.3
20
22
2000
5
1
TC1N5230B
4.7
20
19
1900
5
2
TC1N5231B
5.1
20
17
1600
5
2
TC1N5232B
5.6
20
11
1600
5
3
TC1N5233B
6
20
7
1600
5
3.5
TC1N5234B
6.2
20
7
1000
5
4
TC1N5235B
6.8
20
5
750
3
5
TC1N5236B
7.5
20
6
500
3
6
TC1N5237B
8.2
20
8
500
3
6.5
TC1N5238B
8.7
20
8
600
3
6.5
TC1N5239B
9.1
20
10
600
3
7
TC1N5240B
10
20
17
600
3
8
TC1N5241B
11
20
22
600
2
8.4
TC1N5242B
12
20
30
600
1
9.1
TC1N5243B
13
9.5
13
600
0.5
9.9
TC1N5244B
14
9
15
600
0.1
10
Cathode
Anode
ELECTRICAL SYMBOL
TC
1N
522
1B
thr
o
ugh
TC
1N
52
63
B
Series
L
52
xx
T
DEVICE MARKING DIAGRAM
L
: Logo
Device Code : TC1N52xxT
Tolerance (T) : A = 10%
:
B = 5%
: C = 2%
: D = 1%
AXIAL LEAD
DO35