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| 型號： | TC554001AFI-10 |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 100 ns, PDSO32 |
| 封裝： | 0.525 INCH, 1.27 MM PITCH, PLASTIC, SOP-32 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 142K |
| 代理商： | TC554001AFI-10 |
TC554001AFI/AFTI/ATRI-70,-85,-10,-70L,-85L,-10L
2003-06-23
1/11
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT STATIC RAM
DESCRIPTION
The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory (SRAM) organized as 524,288
words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a
single 5V
± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating
current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 2
A standby current (typ) when chip enable ( CE ) is asserted high. There are two control inputs. CE is used to
select the device and for data retention control, and output enable ( OE ) provides fast memory access. This device is
well suited to various microprocessor system applications where high speed, low power and battery backup are
required. And, with a guaranteed operating extreme temperature range of
40° to 85°C, the
TC554001AFI/AFTI/ATRI can be used in environments exhibiting extreme temperature conditions. The
TC554001AFI/AFTI/ATRI is available in a standard plastic 32-pin small-outline package (SOP) and normal and
reverse pinout plastic 32-pin thin-small-outline package (TSOP).
FEATURES
Low-power dissipation
Operating: 55 mW/MHz (typical)
Single power supply voltage of 5 V ± 10%
Power down features using CE .
Data retention supply voltage of 2.0 to 5.5 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of 40° to 85°C
Standby Current (maximum):
TC554001AFI/AFTI/ATRI
-70,-85,-10
-70L,-85L,-10L
5.5 V
200
A
100
A
3.0 V
100
A
50
A
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
32 PIN SOP & TSOP
32 PIN TSOP
A0~A18
Address Inputs
R/W
Read/Write Control
OE
Output Enable
CE
Chip Enable
I/O1~I/O8
Data Inputs/Outputs
VDD
Power (
+5 V)
GND
Ground
Access Times (maximum):
TC554001AFI/AFTI/ATRI
-70,-70L
-85,-85L
-10,-10L
Access Time
70 ns
85 ns
100 ns
CE Access Time
70 ns
85 ns
100 ns
OE Access Time
35 ns
45 ns
50 ns
Package:
SOP32-P-525-1.27 (AFI)
(Weight: 1.14 g typ)
TSOP II32-P-400-1.27 (AFTI) (Weight: 0.53 g typ)
TSOP II32-P-400-1.27A (ATRI) (Weight: 0.53 g typ)
1
32
2
31
3
30
4
29
5
28
6
27
7
26
8
25
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
VDD
A15
A17
R/W
A13
A8
A9
A11
A10
I/O8
I/O7
I/O6
I/O5
I/O4
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
GND
CE
OE
(AF/AFT)
VDD
A15
A17
R/W
A13
A8
A9
A11
A10
I/O8
I/O7
I/O6
I/O5
I/O4
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
GND
(ATR)
CE
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC554001AFI-10L | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,228 WORDS x 8 BIT STATIC RAM |
| TC554001AFI-70 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,228 WORDS x 8 BIT STATIC RAM |
| TC554001AFI-70L | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,228 WORDS x 8 BIT STATIC RAM |
| TC554001AFI-85 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,228 WORDS x 8 BIT STATIC RAM |
| TC554001AFI-85L | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,228 WORDS x 8 BIT STATIC RAM |
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