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參數(shù)資料
| 型號： | TC4469MJD |
| 廠商： | TelCom Semiconductor, Inc. |
| 英文描述： | LOGIC-INPUT CMOS QUAD DRIVERS |
| 中文描述： | 邏輯輸入的CMOS四驅(qū)動器 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 120K |
| 代理商： | TC4469MJD |
4-262
TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469
Package Thermal Resistance
14-Pin CerDIP
R
θ
J-A......................................
100
°
C/W
R
θ
J-C.........................................
23
°
C/W
R
θ
J-A.........................................
80
°
C/W
R
θ
J-C.........................................
35
°
C/W
14-Pin Plastic DIP
16-Pin Wide SOIC R
θ
J-A.........................................
95
°
C/W
R
θ
J-C.........................................
28
°
C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
I
PK
I
DC
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
Note 3
Note 3
0V
≤
V
IN
≤
V
DD
2.4
0
– 1
—
—
—
V
DD
0.8
1
V
V
μ
A
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Continuous Output Current
I
LOAD
= 100
μ
A (Note 1)
I
LOAD
= 10mA (Note 1)
I
OUT
= 10mA, V
DD
= 18V
V
DD
– 0.025
—
—
—
—
—
—
10
1.2
—
—
0.15
15
—
300
500
—
V
V
A
mA
Single Output
Total Package
4.5V
≤
V
DD
≤
16V
I
Latch-Up Protection
Withstand Reverse Current
500
—
mA
Switching Time
t
R
t
F
t
D1
t
D2
Power Supply
I
S
V
DD
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
15
15
40
40
25
25
75
75
nsec
nsec
nsec
nsec
Power Supply Current
Power Supply Voltage
—
4.5
1.5
—
4
mA
V
Note 2
18
ELECTRICAL CHARACTERISTICS:
Measured at T
A
= +25
°
C with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
TRUTH TABLE
Part No.
TC4467 NAND
TC4468 AND
TC4469 AND/INV
INPUTS A
INPUTS B
OUTPUTS TC446X
H
H
L
H
L
H
L
H
H
L
L
H
H
H
H
H
L
L
L
H
L
L
L
L
H
H
L
H
L
H
L
H
L
L
L
L
H = High L = Low
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ......................... (GND – 5V) to (V
DD
+ 0.3V)
Maximum Chip Temperature
Operating ........................................................+150
°
C
Storage ............................................. – 65
°
to +150
°
C
Maximum Lead Temperature
(Soldering, 10 sec) .........................................+300
°
C
Operating Ambient Temperature Range
C Device .................................................. 0
°
to +70
°
C
E Device ............................................. – 40
°
to +85
°
C
M Device........................................... – 55
°
to +125
°
C
Package Power Dissipation (T
A
≤
70
°
C)
14-Pin CerDIP ................................................840mW
14-Pin Plastic DIP...........................................800mW
16-Pin Wide SOIC ..........................................760mW
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