4-94
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ............................................................18V
Maximum Chip Temperature................................... 150
°
C
Storage Temperature ............................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
Package Thermal Resistance
CerDip R
θ
J-A
................................................ 150
°
C/W
CerDip R
θ
J-C
.................................................. 55
°
C/W
PDIP R
θ
J-A
................................................... 125
°
C/W
PDIP R
θ
J-C
..................................................... 45
°
C/W
SOIC R
θ
J-A
................................................... 250
°
C/W
SOIC R
θ
J-C
..................................................... 75
°
C/W
Operating Temperature
18C4x ...................................... – 55C
°
≤
T
A
≤
+125
°
C
28C4x ........................................– 40C
°
≤
T
A
≤
+85
°
C
38C4x .............................................0C
°
≤
T
A
≤
+70
°
C
ELECTRICAL CHARACTERISTICS
unless otherwise stated, these specifications apply over specific
temperature range. V
IN
= V
DD
= 15V; R
T
= 71 k
; C
T
= 150 pF.
TC18C43
TC28C43
Min
TC38C43
Min
Parameter
Test Conditions
Typ
Max
Typ
Max
Units
Reference Section
Output Voltage
Line Regulation
Load Regulation
Temp Stability
Output Noise Voltage
Long Term Stability
Output Short Circuit
Oscillator Section
Initial Accuracy
Voltage Stability
Temp Stability
Clock Ramp Reset
Amplitude
Maximum Freq
Error Amp Section
Input Offset Voltage
Input Bias Current
A
VOL
Gain Bandwidth Product
PSRR
Output Sink Current
Output Source Current
V
OUT
High
V
OUT
Low
Rise Response
Fall Response
Current Sense Section
Gain Ratio
Maximum Input Signal
PSRR
Input Bias Current
Delay to Output
T
A
= 25
°
C, I
O
= 1mA
9.5V
≤
V
IN
≤
15V, I
O
= 1mA
1mA
≤
l
O
≤
11mA
(Note 1)
10Hz
≤
f
≤
10 kHz,T
A
= 25
°
C (Note 1)
T
A
= 125
°
C, 1000 Hrs. (Note 1)
4.9
—
—
—
—
—
-20
5
5.1
±
10
±
15
±
0.5
—
—
-100
4.90
—
—
—
—
—
-30
5
5.10
±
10
±
10
±
0.5
—
—
-100
V
±
3
±
5
±
3
±
3
mV
mV
mV/
°
C
μ
V(rms)
%
mA
±
0.25
100
±
0.5
-50
±
0.25
100
±
0.5
-50
T
A
= 25
°
C (Note 4)
9.5V
≤
V
IN
≤
15V
T
MIN
≤
T
A
≤
T
MAX
(Note 1); Figure 2
R
T
/C
T
Pin at 4V
R
T
/C
T
Pin Peak to Peak
Note 1
90
—
—
2.25
2.45
1
100
±
0.2
±
0.01
2.5
2.65
—
110
±
0.3
±
0.05
2.75
2.85
—
93.8
—
—
2.25
2.45
1
100
±
0.2
±
0.01
2.5
2.65
—
106.5
±
0.3
±
0.03
2.75
2.85
—
kHz
%
%/
°
C
mA
V
MHz
V
(CMPTR)
= 2.5V
(Note 1)
2V
≤
V
O
≤
4V
(Note 1)
9.5V
≤
V
IN
≤
15V
V
FB
= 2.7V, V
(CMPTR)
= 1.1V (Note 1)
V
FB
= 2.3V, V
(CMPTR)
= 5V (Note 1)
V
FB
= 2.3V, R
L
= 10k to Ground
V
FB
= 2.7V, R
L
= 10k to V
REF
Note 1
Note 1
—
—
70
650
80
1.2
3
5.65
0.1
—
—
±
15
±
0.3
90
750
100
1.5
3.4
6
0.7
5
3
±
50
±
2
—
—
—
—
—
6.5
1.1
7
5
—
—
70
650
80
1.5
3.9
5.65
0.1
—
—
±
15
±
0.3
90
750
100
1.7
4.2
6
0.7
5
3
±
50
±
2
—
—
—
—
—
6.5
1.1
7
5
mV
nA
dB
kHz
dB
mA
mA
V
V
μ
sec
μ
sec
Notes 2 & 3
V
(CMPTR)
= 5V (Note 2)
9.5V
≤
V
IN
≤
15V (Notes 1, 2 & 5)
Note 1
V
(
I
SENSE
)
= 1V (Note 1); Figure 3
2.8
0.85
70
—
—
2.9
0.95
80
±
0.3
140
3.1
1.05
—
±
2
160
2.8
0.85
70
—
—
2.9
0.95
80
±
0.3
140
3.1
1.05
—
±
2
150
V/V
V
dB
nA
nsec
TC18C43
TC28C43
TC38C43
BiCMOS CURRENT MODE
PWM CONTROLLERS