參數(shù)資料
型號(hào)： TC1302BHPVUATR
廠商： Microchip Technology Inc.
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： LOW QUIESCENT CURRENT DUAL OUTPUT LDO
中文描述： 低靜態(tài)電流雙輸出穩(wěn)壓器
文件頁(yè)數(shù)： 14/26頁(yè)
文件大?。?/td> 570K
代理商： TC1302BHPVUATR
TC1302A/B
DS21333B-page 14
2005 Microchip Technology Inc.
6.0
APPLICATION CIRCUITS/
ISSUES
6.1
Typical Application
The TC1302A/B is used for applications that require
the integration of two LDOs.
FIGURE 6-1:
TC1302A/B.
Typical Application Circuit
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation within the TC1302A/B is
a function of input voltage, output voltage, output
current and quiescent current. The following equation
can be used to calculate the internal power dissipation
for each LDO.
EQUATION 6-1:
In addition to the LDO pass element power dissipation,
there is power dissipation within the TC1302A/B as a
result of quiescent or ground current. The power
dissipation, as a result of the ground current, can be
calculated using the following equation.
EQUATION 6-2:
The total power dissipated within the TC1302A/B is the
sum of the power dissipated in both of the LDOs and
the P(I
GND
) term. Because of the CMOS construction,
the typical I
GND
for the TC1302A/B is 116 μA.
Operating at a maximum of 4.2V results in a power
dissipation of 0.5 milliWatts. For most applications, this
is small compared to the LDO pass device power dissi-
pation and can be neglected.
The
maximum
continuous
temperature specified for the TC1302A/B is +125
°
C
.
To
estimate the internal junction temperature of the
TC1302A/B, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R
θ
JA
) of the device. The thermal resistance
from junction-to-ambient for the 3x3DFN8 pin package
is estimated at 41
°
C/W.
operating
junction
EQUATION 6-3:
Package Type = 3x3DFN8
Input Voltage Range = 2.7V to 4.2V
V
IN
maximum = 4.2V
V
IN
typical = 3.6V
V
OUT1
= 300 mA maximum
V
OUT2
= 150 mA maximum
8
4
1
2
3
NC
GND
NC
V
IN
7
BATTERY
C
1 μF Ceramic
X5R
C
1 μF
TC1302A
C
1 μF Ceramic
X5R
C
10 nF Ceramic
Bypass
2.7V
to
4.2V
V
OUT2
6
SHDN2
ON/OFF Control V
OUT2
2.8V @ 300 mA
1.8V
@ 150 mA
5
V
OUT1
8
4
1
2
3
NC
BATTERY
C
OUT1
1 μF Ceramic
X5R
IN
C
TC1302B
C
1 μF Ceramic
X5R
Bypass
V
IN
7
2.7V
to
4.2V
V
OUT2
6
SHDN2
ON/OFF Control V
OUT2
2.8V @ 300 mA
1.8V
@ 150 mA
5
ON/OFF Control V
OUT1
V
OUT1
GND
SHDN1
P
LDO
V
IN MAX
)
)
V
OUT MIN
)
–
(
)
I
OUT MAX
)
)
×
=
P
LDO
= LDO Pass device internal power
dissipation
V
IN(MAX)
= Maximum input voltage
V
OUT(MIN)
= LDO minimum output voltage
P
I GND
)
V
IN MAX
)
I
VIN
×
=
P
I(GND)
= Total current in ground pin.
V
IN(MAX)
= Maximum input voltage.
I
VIN
= Current flowing in the V
IN
pin with
no output current on either LDO output.
T
J MAX
)
P
TOTAL
R
θ
JA
×
T
AMAX
+
=
T
J(MAX)
= Maximum continuous junction
temperature.
P
TOTAL
= Total device power dissipation.
R
θ
JA
= Thermal resistance from junction
to ambient.
T
AMAX
= Maximum Ambient Temperature.
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參數(shù)描述
TC1302B-HPVUATR 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
TC1302BIPVMF 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:LOW QUIESCENT CURRENT DUAL OUTPUT LDO
TC1302B-IPVMF 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
TC1302BIPVMFTR 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:LOW QUIESCENT CURRENT DUAL OUTPUT LDO
TC1302B-IPVMFTR 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
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