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| 型號(hào)： | TC1302BDTVUA |
| 廠商： | Microchip Technology Inc. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | LOW QUIESCENT CURRENT DUAL OUTPUT LDO |
| 中文描述： | 低靜態(tài)電流雙輸出穩(wěn)壓器 |
| 文件頁數(shù)： | 15/26頁 |
| 文件大?。?/td> | 570K |
| 代理商： | TC1302BDTVUA |
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2005 Microchip Technology Inc.
DS21333B-page 15
TC1302A/B
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-4:
EQUATION 6-5:
EQUATION 6-6:
6.3
Typical Application
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
6.3.1
POWER DISSIPATION EXAMPLE
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (R
θ
JA
) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface-mount packages.
The EIA/JEDEC specification is JESD51-7 “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application”,
(DS00792),
regarding this subject.
for
more
information
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
Maximum Package Power Dissipation at 50°C
Ambient Temperature
Package
Package Type = 3x3DFN8
Input Voltage
V
IN
= 2.7V to 4.2V
LDO Output Voltages and Currents
V
OUT1
= 2.8V
I
OUT1
= 300 mA
V
OUT2
= 1.8V
I
OUT2
= 150 mA
P
D MAX
)
T
------------------------–
T
R
θ
JA
)
(
)
=
P
D(MAX)
= maximum device power dissipation.
T
J(MAX)
= maximum continuous junction
temperature.
T
A(MAX)
= maximum ambient temperature.
R
θ
JA
= Thermal resistance from junction to
ambient.
T
J RISE
)
P
D MAX
)
R
θ
JA
×
=
T
J(RISE)
= Rise in device junction temperature over
the ambient temperature.
P
D(MAX)
= Maximum device power dissipation.
R
θ
JA
= Thermal resistance from junction-to-
ambient.
T
J
T
J RISE
)
T
A
+
=
T
J
T
J(RISE)
= Rise in device junction temperature over
the ambient temperature.
T
A
= Ambient Temperature.
= Junction temperature.
Maximum Ambient Temperature
T
A(MAX)
= 50°C
Internal Power Dissipation
Internal power dissipation is the sum of the power
dissipation for each LDO pass device.
P
LDO1(MAX)
= (V
IN(MAX)
- V
OUT1(MIN)
) x
I
OUT1(MAX)
P
LDO1
= (4.2V - (0.975 x 2.8V)) x 300 mA
P
LDO1
= 441.0 milliWatts
P
LDO2
= (4.2V - (0.975 X 1.8V)) x 150 mA
P
LDO2
= 366.8 milliWatts
P
TOTAL
= P
LDO1
+ P
LDO2
P
TOTAL
= 807.8 milliWatts
T
J(RISE)
= P
TOTAL
x Rq
JA
T
JRISE
= 807.8 milliWatts x 41.0
°
C/W
T
JRISE
= 33.1
°
C
T
J
= T
JRISE
+ T
A(MAX)
T
J
= 83.1°C
3x3DFN8 (41°C/Watt R
θ
JA
)
P
D(MAX)
= (125°C - 50°C)/41° C/W
P
D(MAX)
= 1.83 Watts
MSOP8 (208°C/Watt R
θ
JA
)
P
D(MAX)
= (125°C - 50°C)/208° C/W
P
D(MAX)
= 0.360 Watts
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC1302B-DTVUA | 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| TC1302BDTVUATR | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:LOW QUIESCENT CURRENT DUAL OUTPUT LDO |
| TC1302B-DTVUATR | 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| TC1302BHPVMF | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:LOW QUIESCENT CURRENT DUAL OUTPUT LDO |
| TC1302B-HPVMF | 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
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