參數(shù)資料
型號： TC1267
廠商： Microchip Technology Inc.
英文描述： UF4006 800V 1A ULTRAFAST DIODE DO-41
中文描述： 400mA的LDO穩(wěn)壓器的PCI
文件頁數(shù)： 2/14頁
文件大?。?/td> 490K
代理商： TC1267
TC1267
DS21378B-page 2
2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Supply Voltage (V
IN
)..............-0.5V to +7V (Max)
Auxiliary Supply Voltage (V
AUX
) .....-0.5V to +7V (Max)
LDO Output Current (I
OUT
)................................400mA
Thermal Impedance,
Junction-to-Ambient (
θ
JA
).......... 27°C/W for DDPAK
ESD Rating .......................................................... 2 KV
Operating Temperature Range (T
A
)........-5°C to +70°C
Storage Temperature Range (T
STG
)...-65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1267 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
T
A
= +25°C, V
IN
= 5V, V
AUX
= 3.3V, I
OUT
= 0.1mA, C
OUT
= 4.7
μ
F, unless otherwise noted.
Boldface
type specifications apply over full operating range.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V
IN
I
GND
Supply Voltage
Ground Current
4.4
—
—
—
5.0
230
260
-0.1
5.5
450
500
-1.0
V
μ
A
V
AUX
= 0V
V
AUX
= 0V
(Note 6)
V
AUX
= 3.3V
(Note 6)
V
AUX
= 3.5V, V
IN
= 0V, I
OUT
= 0mA
I
VIN
Reverse Leakage from
V
AUX
Supply Voltage
Quiescent Current
μ
A
V
AUX
I
Q(AUX)
3.0
—
—
—
—
—
—
3.75
—
200
—
4.0
—
3.201
3.000
400
—
-0.5
—
-1.5
V
IN
- 0.2
V
IN
- 0.3
—
—
3.3
50
—
60
—
-0.1
3.90
—
260
—
4.15
—
3.300
—
—
—
0.05
—
-0.1
—
V
IN
- 0.1
—
35
—
3.6
70
100
80
120
-1.0
—
4.05
—
300
—
4.30
—
3.366
—
—
—
+0.5
—
+0.5
—
—
150
200
V
μ
A
V
IN
= 0V, I
OUT
= 0mA
μ
A
V
IN
= 5V, I
OUT
= 0mA
I
VAUX
V
TH(LO)
Reverse Leakage from V
IN
5V Detector
Low Threshold Voltage
5V Detector
Hysteresis Voltage
5V Detector
High Threshold Voltage
LDO Output Voltage
μ
A
V
V
IN
= 5.5V, V
AUX
= 0V, I
OUT
= 0mA
V
IN
Falling
(Notes 2, 3)
V
HYST
mV
(Notes 2, 3)
V
TH(HI)
V
V
IN
Rising
(Notes 2, 3)
V
OUT
V
V
V
I
OUT
= 20mA
4.4V
≤
V
IN
≤
5.5V, 0mA
≤
I
OUT
≤
400mA
0mA
≤
I
OUT
≤
400mA
(Note 4)
I
OUT
REG
(LINE)
Output Current
Line Regulation
mA
%
V
IN
= 4.3V to 5.5V
REG
(LOAD)
Load Regulation
%
I
OUT
= 0.1mA to 400mA
V
DR
Drive Voltage
V
4.3V
≤
V
IN
≤
5.5V, I
DR
= 200
μ
A
mV
V
IN
< V
TH(LO)
, I
DR
= 200
μ
A
Note
1:
2:
3:
Ensured by design.
See 5V Detect Thresholds, Figure 4-1.
Recommended source impedance for 5V supply:
≤
0.25
. This will ensure that I
OUT
x R
SOURCE
< V
HYST
, thus avoiding D
R
toggling during
5V detect threshold transitions.
In Application Circuit, Figure 3-1.
See Timing Diagram, Figure 4-2.
Ground Current is independent of I
LOAD
.
4:
5:
6:
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