參數(shù)資料
型號： TC1265-3.3VOATR
廠商： Microchip Technology Inc.
英文描述： 800 mA Fixed-Output CMOS LDO with Shutdown
中文描述： 800毫安固定輸出CMOS低壓帶有關斷
文件頁數(shù)： 3/16頁
文件大小： 262K
代理商： TC1265-3.3VOATR
2004 Microchip Technology Inc.
DS21376C-page 3
TC1265
SHDN Input
SHDN Input High Threshold
V
IH
V
IL
45
—
—
%V
IN
%V
IN
SHDN Input Low Threshold
—
—
15
ERROR Output (SOIC Only)
Minimum Operating Voltage
V
MIN
V
OL
V
TH
V
HYS
1.0
—
—
V
Output Logic Low Voltage
—
—
400
mV
1 mA Flows to ERROR
ERROR Threshold Voltage
—
0.95 x V
R
50
—
V
ERROR Positive Hysteresis
—
—
mV
Note 8
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, V
IN
= V
R
+ 1.5V,
(Note 1)
, I
L
= 100 μA, C
L
= 3.3 μF,
SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note
1:
V
R
is the regulator output voltage setting.
2:
The minimum V
IN
has to justify the conditions: V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1 mA to I
OUTMAX
.
3:
TCV
OUT
V
OUT
T
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects
are covered by the thermal regulation specification.
5:
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value
measured at a 1.5V differential.
6:
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for T = 10 ms.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temper-
ature and the thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipa-
tion causes the device to initiate thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
8:
Hysteresis voltage is referenced to V
R
.
TEMPERATURE CHARACTERISTICS
---------------------------–
(
)
10
6
–
=
Electrical Specifications:
Unless otherwise indicated, V
IN
= V
R
+ 1.5V, I
L
= 100 μA, C
L
= 3.3 μF,
SHDN > V
IH
, T
A
= +25°C.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-DDPAK
Thermal Resistance, 5L-TO-220
Thermal Resistance, 8L-SOIC
Note
1:
Operation in this range must not cause T
J
to exceed Maximum Junction Temperature (+125°C).
Sym
Min
Typ
Max
Units
Conditions
T
A
T
J
T
A
-40
-40
-65
—
—
—
+125
+125
+150
°C
°C
°C
(Note 1)
θ
JA
θ
JA
θ
JA
—
—
—
57
71
163
—
—
—
°C/W
°C/W
°C/W
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