參數(shù)資料
型號(hào): TC1187VCT
廠商: Microchip Technology Inc.
英文描述: 50mA, 100mA and 150mA Adjustable CMOS LDOs with Shutdown
中文描述: 為50mA,100mA的電流為150mA可調(diào)的CMOS LDO的有關(guān)斷
文件頁(yè)數(shù): 3/16頁(yè)
文件大小: 495K
代理商: TC1187VCT
2002 Microchip Technology Inc.
DS21353B-page 3
TC1070/TC1071/TC1187
TC1070/TC1071/TC1187 ELECTRICAL SPECIFICATION
S (CONTINUED
)
Electrical Characteristics:
V
IN
= V
OUT
+ 1V, I
L
= 0.1mA, C
L
= 3.3
μ
F, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
SHDN Input
V
IH
V
IL
ADJ Input
I
ADJ
Note
SHDN Input High Threshold
SHDN Input Low Threshold
45
15
%V
IN
%V
IN
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
Adjust Input Leakage Current
50
pA
1:
2:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
at V
= 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
, T
,
θ
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
The minimum V
IN
has to justify the conditions: V
IN
V
R
+ V
DROPOUT
and V
IN
2.7V for I
L
= 0.1mA to I
OUT
MAX
.
3:
4:
5:
6:
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
) x 10
6
V
OUT
x
T
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