參數(shù)資料
型號(hào)： TB28F800CV-T60
廠商： Intel Corp.
英文描述： 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 2兆位SmartVoltage啟動(dòng)塊閃存系列
文件頁(yè)數(shù)： 12/55頁(yè)
文件大?。?/td> 638K
代理商： TB28F800CV-T60
2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
12
SEE NEW DESIGN RECOMMENDATIONS
Table 2. 28F200/002 Pin Descriptions
Symbol
Type
Name and Function
WP#
INPUT
WRITE PROTECT:
Provides a method for unlocking the boot block in a system
without a 12 V supply.
When WP# is at logic low, the boot block is locked
, preventing program and
erase operations to the boot block. If a program or erase operation is attempted
on the boot block when WP# is low, the corresponding status bit (bit 4 for
program, bit 5 for erase) will be set in the status register to indicate the operation
failed.
When WP# is at logic high, the boot block is unlocked
and can be
programmed or erased.
NOTE:
This feature is overridden and the boot block unlocked when RP# is at
V
HH
. See Section 3.4 for details on write protection.
BYTE#
INPUT
BYTE# ENABLE:
Not available on
28F002B
. Controls whether the device
operates in the byte-wide mode (x8) or the word-wide mode (x16). BYTE# pin
must be controlled at CMOS levels to meet the CMOS current specification in the
standby mode.
When BYTE# is at logic low, the byte-wide mode is enabled
, where data is
read and programmed on DQ
0
–DQ
7
and DQ
15
/A
–1
becomes the lowest order
address that decodes between the upper and lower byte. DQ
8
–DQ
14
are tri-stated
during the byte-wide mode.
When BYTE# is at logic high, the word-wide mode is enabled
, where data is
read and programmed on DQ
0
–DQ
15
.
V
CC
DEVICE POWER SUPPLY:
5.0 V
±
10%, 3.3 V
±
0.3 V, 2.7 V–3.6 V (BE/CE
only)
V
PP
PROGRAM/ERASE POWER SUPPLY:
For erasing memory array blocks or
programming data in each block, a voltage either of 5 V
±
10% or 12 V
±
5% must
be applied to this pin. When V
PP
< V
PPLK
all blocks are locked and protected
against Program and Erase commands.
GND
GROUND:
For all internal circuitry.
NC
NO CONNECT:
Pin may be driven or left floating.
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