- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383879 > TB28F400CV-T60 (Intel Corp.) 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY PDF資料下載
參數(shù)資料
| 型號： | TB28F400CV-T60 |
| 廠商： | Intel Corp. |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 2兆位SmartVoltage啟動塊閃存系列 |
| 文件頁數(shù)： | 34/50頁 |
| 文件大小： | 559K |
| 代理商： | TB28F400CV-T60 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁當(dāng)前第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁
28F400BX-T/B, 28F004BX-T/B
DC CHARACTERISTICS: EXTENDED TEMPERATURE OPERATION
(Continued)
Symbol
Parameter
Notes
Min
Typ Max Unit
Test Conditions
V
OH2
Output High Voltage (CMOS)
0.85 V
CC
V
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
V
CC
e
V
CC
Min
I
OH
e b
100
m
A
V
CC
b
0.4
V
PPL
V
PP
during Normal Operations
3
0.0
6.5
V
V
PPH
V
PP
during Erase/Write Operations
7
11.4
12.0 12.6
V
V
PPH
V
PP
during Erase/Write Operations
8
10.8
12.0 13.2
V
V
LKO
V
CC
Erase/Write Lock Voltage
RP
Y
Unlock Voltage
2.0
V
V
HH
11.5
13.0
V
Boot Block Write/Erase
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
e
5.0V, V
PP
e
12.0V, T
e
25
§
C. These currents
are valid for all product versions (packages and speeds).
2. I
CCES
is specified with the device deselected. If the device is read while in Erase Suspend Mode, current draw is the sum
of I
and I
.
3. Block Erases and Word/Byte Writes are inhibited when V
PP
e
V
PPL
and not guaranteed in the range between V
PPH
and
V
PPL
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to less than 1 mA typical in static operation.
6. CMOS Inputs are either V
CC
g
0.2V or GND
g
0.2V. TTL Inputs are either V
IL
or V
IH
.
7. V
PP
e
12.0V
g
5% for applications requiring 100,000 block erase cycles.
8. V
e
12.0V
g
10% for applications requiring wider V
tolerances at 100 block erase cycles.
9. For the 28F004BX address pin A
10
follows the C
OUT
capacitance numbers.
10. I
CCR
typical is 20 mA for X16 Active Read Current.
CAPACITANCE
(1)
T
A
e
25
§
C, f
e
1 MHz
Symbol
Parameter
Typ
Max
Unit
Conditions
C
IN
Input Capacitance
6
8
pF
V
IN
e
0V
V
OUT
e
0V
C
OUT
Output Capacitance
10
12
pF
NOTE:
1. Sampled, not 100% tested.
34
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TB28F400CV-B60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F400BVB80 | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800BV-B60 | RP30 (EW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 15V; 4:1 Wide Input Voltage Range; 30 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x40.6x10.2mm Package; Efficiency to 88% |
| TB28F800BV-T60 | POWERLINE: RP40-S_D_TG - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- International Safety Standard Approvals- Standard 50.8 x50.8x10.2mm Package- Efficiency to 90% |
| TB28F800BV-B80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TB28F400CV-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800B5B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| TB28F800B5T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| TB28F800BV-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800BV-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。