參數(shù)資料
型號: TB28F400BX-T80
廠商: INTEL CORP
元件分類: DRAM
英文描述: 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 256K X 16 FLASH 12V PROM, 80 ns, PDSO44
封裝: 20 X 14 MM, TSOP-44
文件頁數(shù): 26/50頁
文件大?。?/td> 559K
代理商: TB28F400BX-T80
28F400BX-T/B, 28F004BX-T/B
290451–8
Bus
Command
Comments
Operation
Write
Setup
Program
Data
e
40H
Address
e
Word to be
programmed
Write
Program
Data to be programmed
Address
e
Word to be
programmed
Read
Status Register Data.
Toggle OE
Y
or CE
Y
to update
Status Register
Standby
Check SR.7
1
e
Ready, 0
e
Busy
Repeat for subsequent words.
Full status check can be done after each word or after a
sequence of words.
Write FFH after the last word programming operation to
reset the device to Read Array Mode.
Full Status Check Procedure
290451–9
Bus
Command
Comments
Operation
Standby
Check SR.3
1
e
V
PP
Low Detect
Standby
Check SR.4
1
e
Word Program Error
SR.3 MUST be cleared, if set during a program attempt,
before further attempts are allowed by the Write State
Machine.
SR.4 is only cleared by the Clear Status Register
Command, in cases where multiple words are programmed
before full status is checked.
If error is detected, clear the Status Register before
attempting retry or other error recovery.
Figure 13. Automated Word Programming Flowchart
26
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