參數(shù)資料
型號(hào)： TB28F200BV-T80
廠商： INTEL CORP
元件分類： DRAM
英文描述： RP40 (G) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; 2:1 Wide Input Voltage Range; 40 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Design Meet Safety Standard; Standard 50.8 x50.8x10.2mm Package; Efficiency to 90%
中文描述： 256K X 8 FLASH 5V PROM, 110 ns, PDSO44
封裝： 0.525 X 1.110 INCH, PLASTIC, SOP-44
文件頁(yè)數(shù)： 48/48頁(yè)
文件大?。?/td> 562K
代理商： TB28F200BV-T80
28F200BX-T/B, 28F002BX-T/B
Revision History
Number
Description
-002
Removed
b
70 speed bin
Integrated
b
70 characteristics into
b
60 speed bin
Added Extended Temperature characteristics
Modified BYTE
Y
Timing Diagram
Improved t
PHQV
, RP
Y
High to Output Delay and t
PHEL
, RP
Y
High Recovery to CE
Y
going low
specifications
-003
PWD changed to RP
Y
for JEDEC standardization compatibility.
Combined V
CC
Read current for 28F200BX Word-wide mode and Byte-wide mode, and
28F002BX Byte-wide mode in DC Characteristics tables.
Change I
PPS
current spec from
g
10
m
A to
g
15
m
A in DC Characteristics tables.
Improved I
CCR
and I
CCW
in DC Characteristics: Extended Temperature Operation table.
Improved t
AVAV
, t
AVQV
, t
ELQV
, t
GLQV
, t
EHQZ
, t
GHQZ
, t
FHQV
and t
FLQZ
specifications for
Extended Temperature Operations AC CharacteristicsDRead and Write Operations.
-004
Added specifications for 120 ns access time product version; 28F200BX-120 and
28F002BX-120.
Included permanent change on write timing parameters for -80 ns product versions. Write
pulse width (t
WP
and t
CP
) increases from 50 ns to 60 ns. Write pulse width high (t
WPH
and
t
CPH
) decreases from 30 ns to 20 ns. Total write cycle time (t
WC
) remains unchanged.
Added I
CCR
test condition note for typical frequency value in DC characteristics table.
Added I
OH
CMOS specification.
Added 28F400BX interface to Intel386
TM
EX Embedded Processor block diagram.
Added description of how to upgrade to SmartVoltage Boot Block products.
-005
Added references to input rise/fall times.
48
相關(guān)PDF資料
PDF描述
TB28F200BVB80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F400BX-B80 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
TB28F400BV-B60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F400BV-B80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F400BV-T80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TB28F200BX 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TB28F200BX-B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TB28F200BX-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TB28F200CV-B60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F200CV-B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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