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參數(shù)資料
| 型號： | T70RIA40 |
| 廠商： | International Rectifier |
| 英文描述： | MEDIUM POWER PHASE CONTROL THYRISTORS |
| 中文描述： | 中功率相位控制晶閘管 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 229K |
| 代理商： | T70RIA40 |
T..RIA Series
3
Bulletin I27105 rev. B 02/02
www.irf.com
T
J
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting
torque ± 10%
Approximate weight
Case style
-40 to 125
°C
T
stg
-40 to 150
°C
R
thJC
0.65
0.50
0.38
K/W
DC operation, per junction
R
thCS
0.2
K/W
Mounting surface smooth, flat and greased
T
to heatsink
terminals
1.3 ± 10%
3 ± 10%
54
D-56
Nm
M3.5 mounting screws
(2)
M5 screw terminals
See outline table
T type
wt
g
I
RRM
I
DRM
V
INS
Maximum peak reverse and
off-state leakage current
15
mA
T
J
= T
J
= T
J
max.
RMS isolation voltage
3500
V
50Hz, circuit to base, all terminals shorted,
T
J
= 25°C, t = 1s
T
J
= T
J
max., linear to 80% rated V
DRM
(1)
dv/
dt
Critical rate of rise of off-state
voltage
(1)
Available with dv/dt = 1000V/
μ
s, to complete code add S90 i.e. T90RIA80S90
500
V/μs
Blocking
Thermal and Mechanical Specifications
(2)
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the
spread of the compound.
Parameter
T50RIA
T70RIA
T90RIA
Units Conditions
Parameter
T50RIA
T70RIA
T90RIA
Units Conditions
Triggering
P
GM
P
G(AV)
Max. average gate power
I
GM
Max. peak gate current
-V
GT
Max. peak negative
gate voltage
Max. peak gate power
10
12
12
W
tp
≤
5ms, T
J
= T
J
max.
f=50Hz, T
J
= T
J
max.
tp
≤
5ms, T
J
= T
J
max.
2.5
3.0
3.0
W
2.5
3.0
3.0
A
10
10
10
V
V
GT
Max. required DC gate
voltage to trigger
4.0
2.5
1.5
250
100
50
0.2
4.0
2.5
1.5
270
120
60
0.2
4.0
2.5
1.5
270
120
60
0.2
V
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
@ T
J
= T
J
max., rated V
DRM
applied
Anode supply = 6V, resistive
load; Ra = 1
I
GT
Max. required DC gate
current to trigger
Anode supply = 6V, resistive
load; Ra = 1
mA
V
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Max. rate of rise of
turned-on current
V
I
GD
5.0
6.0
6.0
mA
di/
dt
200
180
A/μs
V
D
= 0.67 rated V
DRM
, I
TM
= 2 x rated di/dt
I
g
= 400mA for T50RIA and I
g
= 500mA for
T70RIA & T90RIA; tr < 0.5μs, tp >= 6μs
160
150
For repetitive value use 40% non-repetitive
Per JEDEC std. RS397,5.2.2.6
Parameter
T50RIA
T70RIA
T90RIA
Units Conditions
non lubricated
threads
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