參數(shù)資料
型號: T435-600H
廠商: STMICROELECTRONICS
元件分類: 晶閘管
英文描述: 600 V, 4 A, SNUBBERLESS TRIAC
封裝: IPAK-3
文件頁數(shù): 3/10頁
文件大?。?/td> 113K
代理商: T435-600H
T4 Series
2/10
Table 3: Absolute Maximum Ratings
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine
wave)
IPAK/DPAK/
TO-220AB
Tc = 110°C
4A
ISOWATT220AB Tc = 105°C
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz
t = 20 ms
30
A
F = 60 Hz
t = 16.7 ms
31
ItIt Value for fusing
tp = 10 ms
5.1
As
dI/dt
Critical rate of rise of on-state cur-
rent IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 125°C
50
A/s
IGM
Peak gate current
tp = 20 s
Tj = 125°C
4A
PG(AV)
Average gate power dissipation
Tj = 125°C
1W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Symbol
Test Conditions
Quadrant
T4
Unit
T405
T410
T435
IGT (1)
VD = 12 V RL = 30
I - II - III
MAX.
5
10
35
mA
VGT
I - II - III
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 k
Tj = 125°C
I - II - III
MIN.
0.2
V
IH (2)
IT = 100 mA
MAX.
10
15
35
mA
IL
IG = 1.2 IGT
I - III
MAX.
10
25
50
mA
II
15
30
60
dV/dt (2)
VD = 67 %VDRM gate open
Tj = 125°C
MIN.
20
40
400
V/s
(dI/dt)c (2)
(dV/dt)c = 0.1 V/s
Tj = 125°C
MIN.
1.8
2.7
-
A/ms
(dV/dt)c = 10 V/s
Tj = 125°C
0.9
2.0
-
Without snubber
Tj = 125°C
--
2.5
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
相關PDF資料
PDF描述
T435-700B-TR 700 V, 4 A, SNUBBERLESS TRIAC
T435-800B-TR 800 V, 4 A, SNUBBERLESS TRIAC
T435-800H 800 V, 4 A, SNUBBERLESS TRIAC
T458N20TOF 1000 A, 2000 V, SCR
T458N22TOF 1000 A, 2200 V, SCR
相關代理商/技術參數(shù)
參數(shù)描述
T435-600HTR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4A TRIACS
T435-600H-TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4A TRIACS
T435-600K 制造商:JIEJIE 制造商全稱:JIEJIE 功能描述:4A TRIACs
T435-600T 功能描述:雙向可控硅 4.0 Amp 600 Volt RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
T435-600T11F4 制造商:STMicroelectronics 功能描述:T435-600T11F4 - Rail/Tube