參數(shù)資料
型號(hào): T2514xKS
廠商: 意法半導(dǎo)體
英文描述: Snubberless Triac(雙向可控硅)
中文描述: 緩沖器雙向可控硅(雙向可控硅)
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 62K
代理商: T2514XKS
P
G (AV)
= 1W P
GM
=10 W (tp = 20
μ
s)
I
GM
= 4 A (tp = 20
μ
s)
GATE CHARACTERISTICS
(maximumvalues)
Symbol
Parameter
Value
Unit
Rth(j-c)
Junctionto case for D.C
1.7
°
C/W
Rth(j-c)
Junctionto case for A.C 360
°
conductionangle(F=50Hz)
1.3
°
C/W
THERMAL RESISTANCES
ORDERING INFORMATION
T
25
16
M
KS
TRIAC MESA GLASS
CURRENT
PACKAGES:
KS = RD107 Insulated
VOLTAGE
SENSITIVITY
Symbol
Test Conditions
Quadrant
Sensitivity
Unit
14
16
I
GT
V
D
=12V (DC) R
L
=33
Tj=25
°
C
I-II-III
MIN
2
mA
MAX
35
50
V
GT
V
D
=12V (DC) R
L
=33
Tj=25
°
C
I-II-III
MAX
1.5
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj= 125
°
C
I-II-III
MIN
0.2
V
tgt
V
D
=V
DRM
I
G
= 500mA
I
T
= 35A
dl
G
/dt= 3A
μ
s
Tj=25
°
C
I-II-III
TYP
2
μ
s
I
H
*
I
T
= 250mA
Gate open
Tj=25
°
C
MAX
35
50
mA
I
L
I
G
= 1.2 I
GT
Tj = 25
°
C
I-III
TYP
35
50
mA
II
TYP
70
100
V
TM
*
I
TM
= 35A tp= 380
μ
s
Tj=25
°
C
MAX
1.5
V
I
DRM
I
RRM
V
D
=V
DRM
V
R
= V
RRM
Tj=25
°
C
MAX
10
μ
A
Tj= 125
°
C
MAX
3
mA
dV/dt*
V
D
=67%V
DRM
Gate open
Tj= 125
°
C
MIN
500
750
V/
μ
s
(dI/dt)c *
Withoutsnubber
Tj= 125
°
C
MIN
12
22
A/ms
TYP
24
44
* Foreither polarity of electrode A2voltage with reference to electode A1
ELECTRICALCHARACTERISTICS
T2514xKS / T2516xKS
2/5
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