參數(shù)資料
型號： SY58027U
廠商： Micrel Semiconductor,Inc.
英文描述： ULTRA-PRECISION DIFFERENTIAL 400mV LVPECL 2:1 MUX with INTERNAL TERMINATION
中文描述： 超精密差400mV的的LVPECL 2:1復用器的內(nèi)部終端
文件頁數(shù)： 3/12頁
文件大?。?/td> 333K
代理商： SY58027U
3
Precision Edge
SY58019U
Micrel, Inc.
M9999-051105
hbwhelp@micrel.com or (408) 955-1690
Absolute Maximum Ratings
(1)
Power Supply Voltage (V
CC
)......................
–
0.5V to +4.0V
Input Voltage (V
IN
) .........................................
–
0.5V to V
CC
LVPECL Output Current (I
OUT
)
Continuous .............................................................50mA
Surge....................................................................100mA
Termination Current
(3)
Source or Sink Current on V
T
pin.......................
±
100mA
Input Current
Source or Sink Current on IN, /IN pin...................
±
50mA
Lead Temperature (soldering, 20 sec.) ..................... 260
°
C
Storage Temperature Range (T
S
)...........
–
65
°
C to +150
°
C
Operating Ratings
(2)
Power Supply Voltage (V
CC
)............... +2.375V to +2.625V
............................................................ +3.0V to +3.6V
Ambient Temperature Range (T
A
) .............
–
40
°
C to +85
°
C
Package Thermal Resistance
(4)
MLF
(
θ
JA
)
Still-Air .............................................................60
°
C/W
MLF
(
ψ
JB
)
Junction-to-Board ............................................38
°
C/W
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
CC
Power Supply Voltage
V
CC
= 2.5V
V
CC
= 3.3V
No load, max. V
CC
2.375
3.0
2.5
3.3
2.625
3.6
V
V
I
CC
R
DIFF_IN
Power Supply Current
55
70
mA
Differential Input Resistance
(IN0-to-/IN0, IN1-to-/IN1)
80
100
120
R
IN
Input Resistance
(IN0-to-V
T0
, /IN0-to-V
T0
,
IN1-to-V
T1
, /IN1-to-V
T1
)
Input HIGH Voltage
(IN0, /IN0, IN1, /IN1)
40
50
60
V
IH
Note 6
V
CC
–
1.6
V
CC
V
V
IL
Input LOW Voltage
(IN0, /IN0, IN1, /IN1)
0
V
IH
–
0.1
V
V
IN
Input Voltage Swing
(IN0, /IN0, IN1, /IN1)
See Figure 1a
100
1700
mV
V
DIFF_IN
Differential Input Voltage Swing
|IN0, /IN0|, |IN1, /IN1|
See Figure 1b
200
mV
V
T IN
IN to V
T
(IN0, /IN0, IN1, /IN1)
1.28
V
Notes:
1. Permanent device damage may occur if
“
Absolute Maximum Ratings
”
are exceeded. This is a stress rating only and functional operation is not
implied at conditions other than those detailed in the operational sections of this data sheet. Exposure to
“
Absolute Maximum Ratings
”
conditions for
extended periods may affect device reliability.
2. The data sheet limits are not guaranteed if the device is operated beyond the operating ratings.
3. Due to the limited drive capability, use for input of the same package only.
4. Package thermal resistance assumes exposed pad is soldered (or equivalent) to the device
’
s most negative potential (GND) on the PCB.
ψ
JB
uses
4-layer
θ
JA
in still-air measurement, unless otherwise stated.
5. The circuit is designed to meet the DC specifications shown in the above table after thermal equilibrium has been established.
6. V
IH
(min) not lower than 1.2V.
DC ELECTRICAL CHARACTERISTICS
(5)
T
A
=
–
40
°
C to +85
°
C, unless otherwise stated.
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