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參數(shù)資料
| 型號： | SW-219GPIN |
| 英文描述： | GaAs Foundry Services PROCESS PE3 |
| 中文描述： | 砷化鎵晶圓代工服務(wù)過程PE3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 97K |
| 代理商： | SW-219GPIN |
GaAs SPDT RF Switch
DC - 3 GHz
SW-219
Features
Fast Switching Speed, 6 ns Typical
Ultra Low DC Power Consumption
Small Package Size, 0.180" (4.6mm) Sq.
Guaranteed Specifications
1
Frequency Range
Insertion Loss
(-55°Cto +85°C)
DC – 3.0 GHz
0.9 dB Max
0.8 dB Max
0.8 dB Max
0.7 dB Max
1.6:1 Max
1.3:1 Max
1.2:1 Max
1.2:1 Max
23 dB Min
28 dB Min
38 dB Min
43 dB Min
DC – 3.0 GHz
DC – 2.0 GHz
DC – 1.0 GHz
DC – 0.5 GHz
DC – 3.0 GHz
DC – 2.0 GHz
DC – 1.0 GHz
DC – 0.5 GHz
DC – 3.0 GHz
DC – 2.0 GHz
DC – 1.0 GHz
DC – 0.5 GHz
VSWR
Isolation
Operating Characteristics
Impedance
Switching Characteristics
Trise, Tfall
Ton, Toff(50% CTL to 90%/10% RF)
Transients (In-Band)
Input Power for 1 dB Compression
Control Voltages (Vdc)
0.5 – 3.0 GHz
0.05 GHz
Intermodulation Intercept Pt.
(for two-tone input power up to +13 dBm)
Intercept Points
0.5 – 3.0 GHz
0.05 GHz
Control Voltages (Complementary Logic)
Vin Low
Vin High
1. All specifications apply with 50 ohm impedance connected to all RF ports
with 0 and -5 Vdc control voltages.
2. See Appendix for MIL-STD-883 screening option.
Ordering Information
Part Number
Package
SW-219 PIN
Ceramic (CR-3)
SW-219G PIN
Ceramic Gull Winged
(CR-10)
SW-219B PIN
Screened to MIL-STD-883C,
Method 5008.4, Table VII
Class B Hybrid (CR-3)
50 Ohms Nominal
3 ns Typ
6 ns Typ
10 mV Typ
0/-5
+27
+21
0/-8
+33
+26
dBm Typ
dBm Typ
IP2
+62
+68
IP3
+40
+46
dBm Typ
dBm Typ
0 to -0.2V @ 20 μA Max
-5V @ 50 μA Typ to -8V @ 300 μA Max
CR-3
CR-10
G
G
G
V 2.00
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