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參數(shù)資料
| 型號(hào)： | SV1016MC |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 180 A, 1600 V, SILICON, RECTIFIER DIODE |
| 封裝： | DO-8C, 1 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 148K |
| 代理商： | SV1016MC |
2/8
www.dynexsemi.com
SV10
SURGE RATINGS
Conditions
10ms half sine; T
case = 175
oC
V
R = 50% VRRM - 1/4 sine
10ms half sine; T
case =175
oC
V
R = 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2tI2t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2t
I
2t for fusing
A
2s
2.2
kA
14.9 x 103
A2s
1.76
kA
24.0 x 10
3
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
oC/W
-0.08
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Symbol
Parameter
-0.23
oC/W
175
oC
T
vj
Virtual junction temperature
T
stg
Storage temperature range
-55
200
oC
-
175
oC
Mounting torque 15.0Nm
with mounting compound
On-state (conducting)
Reverse (blocking)
dc
Mounting Torque
-
12.0
15.0
Nm
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
C
-
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RM
Peak recovery current
100*
-
A
300*
At V
RRM, Tcase = 175
oC-
20
mA
-1.5
V
At 300A peak, T
case = 25
oC
Conditions
Typ.
Max.
Units
At T
vj = 175C
-
V
TO
Threshold voltage
r
T
Slope resistance
1.3
m
At T
vj = 175C
-
1.1
V
t
rr
reverse recovery time
6.5*
-
s
I
F = 100A, dIRR/dt = 20A/s, Tcase = 25C
*Typical values.
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