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參數(shù)資料
| 型號(hào)： | STQ1NC60R-AP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | STQ1NC60R-AP |
STQ1NC60
2/7
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE = 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
TO-92
120
Rthj-amb
Thermal Resistance Junction-ambient Max
°
C/W
°
C/W
°
C
Rthj-lead
Thermal Resistance Junction-lead Max
40
T
l
Maximum Lead Temperature For Soldering Purpose
260
Parameter
Max Value
0.3
Unit
A
60
mJ
Test Conditions
I
D
= 250
μ
A, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μ
A
μ
A
nA
50
V
GS
=
±
30V
±
100
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 0.3 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
12
15
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 0.3 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
0.87
Max.
Unit
S
Forward Transconductance
C
iss
Input Capacitance
108
pF
C
oss
Output Capacitance
18
pF
C
rss
Reverse Transfer
Capacitance
2.5
pF
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