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參數(shù)資料
| 型號(hào)： | STP80NE03L |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 其它接口 |
| 英文描述： | TERMINAL |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | STP80NE03L |
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are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
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STP80NE03L-06
8/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP80NE06-10 | CAPACITOR, CASE C, 68UF, 6.3V; Application:Solid; Capacitance:68uF; Tolerance, capacitance:20%; Series:NOS; Voltage, rating:6.3V; Capacitor dielectric type:Niobium Oxide; Case style:C; Depth, external:2.6mm; Length / Height, RoHS Compliant: Yes |
| STP80NF55-07 | N-Channel 55V-0.0055Ω-80A- TO-220 STripFET Power MOSFET(N溝道功率MOSFET) |
| STPAC02F1 | RF DETECTOR FOR POWER AMPLIFIER CONTROL WITH INTERNAL TEMPERATURE COMPENSATION IPADTM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP80NE03L06 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 80A I(D) | TO-220AB |
| STP80NE03L-06 | 功能描述:MOSFET N-Ch 30 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP80NE03L-06 | 制造商:STMicroelectronics 功能描述:MOSFET N LOGIC TO-220 |
| STP80NE06-10 | 功能描述:MOSFET RO 511-STP80NF06 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP80NF03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0034 ohm - 80A TO-220 STripFET POWER MOSFET |
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