參數(shù)資料
型號(hào): STP55NF03L
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET
中文描述: N溝道30V的- 0.01歐姆- 55A條TO-220/D2PAK/I2PAK STripFET⑩二功率MOSFET
文件頁數(shù): 2/8頁
文件大?。?/td> 85K
代理商: STP55NF03L
STP55NF03L
2/8
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
j
ELECTRICAL CHARACTERISTICS
(T
case
= 25
°
C unless otherwise specified)
OFF
ON
(*
)
DYNAMIC
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1.875
62.5
0.5
300
°
C/W
°
C/W
°
C/W
°
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
=Max Rating T
C
= 125
°
C
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
15 V
±
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250
μ
A
1
V
R
DS(on)
Static Drain-source On Resis-
tance
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 27.5 A
I
D
= 27.5 A
0.01
0.013
0.013
0.020
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
55
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(*)
Forward Transconductance
V
DS
>I
D(on)
x R
DS(on)max
I
D
=27.5 A
30
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitances
V
DS
= 25V f = 1 MHz V
GS
= 0
1265
435
115
pF
pF
pF
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