參數(shù)資料
型號(hào)： STP4NA60FP
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
中文描述： ? -快速通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 203K
代理商： STP4NA60FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
R
G
= 47
(see test circuit, figure 3)
V
DD
= 480 V
R
G
= 47
(see test circuit, figure 5)
V
DD
= 480 V
I
D
= 2 A
V
GS
= 10 V
23
60
35
85
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 4 A
V
GS
= 10 V
185
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 2 A
V
GS
= 10 V
32
7
14
45
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
R
G
= 47
(see test circuit, figure 5)
I
D
= 4 A
V
GS
= 10 V
45
17
70
60
25
95
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
4.3
17.2
A
A
V
SD
(
)
t
rr
I
SD
= 4.3 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 4 A
V
DD
= 100 V
(see test circuit, figure 5)
480
6
25
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Areas for TO-220
Safe Operating Areas for ISOWATT220
STP4NA60/FI
3/10
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