參數(shù)資料
型號: STL51007N
廠商: INFINEON TECHNOLOGIES AG
元件分類: 光發(fā)射
英文描述: FIBER OPTIC LASER DIODE EMITTER, 1280-1330nm, 1000Mbps, PANEL MOUNT, TO-18, FC CONNECTOR
封裝: HERMETIC SEALED, SIMILAR TO TO-46, 4 PIN
文件頁數(shù): 7/10頁
文件大小: 274K
代理商: STL51007N
STL51007x
Technical Data
Data Sheet
6
2001-06-01
Slope efficiency (–40...85°C)
η
860
mW/A
Variation of 1st derivative of P/I
(0.05 to 0.4 mW)
S
var
–30
30
%
Differential series resistance
R
S
8
Rise time (10%–90%)
t
r
100
200
ps
Fall time (10%–90%)
t
f
270
500
Monitor Diode Electro-Optical Characteristics
Parameter
Symbol
Limit Values
Unit
min.
max.
Dark current,
V
R = 5 V, PF = 0, T = Tmax
I
R
500
nA
Photocurrent,
V
R = 5 V, PF = 0.5 PF, max
I
P
100
1000
A
Capacitance,
V
R = 5 V, f = 1 MHz
C
5
10
pF
Tracking error
1),
V
R = 5 V
1)
The tracking error TE is the maximum deviation of
P
F at constant current Imon over a specified temperature
range and relative to the reference point:
I
mon, ref = Imon (T = 25°C, PF = 0.5 PF, max.). Thus, TE is given by:
TE
–1
1
dB
End of Life Time Characteristics
Parameter
Symbol
Limit Values
Unit
min.
max.
Threshold current at
T = T
max
I
th
60
mA
Current above threshold, over full
temperature range, at
I
mon, ref = Imon
(
T = 25°C, P
F = 0.5 PF, max., BOL)
I
F
770
Tracking Error
TE
–1.5
1.5
dB
Monitor Dark Current,
V
R = 2 V, T = Tmax
I
R
1A
Transmitter Electro-Optical Characteristics (cont’d)
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
TE dB
[]
10
P
F TC
[]
P
F 25°C
[]
-------------------------
log
×
=
相關(guān)PDF資料
PDF描述
STLQ015XG15R FIXED POSITIVE LDO REGULATOR, PDSO6
STLS2F02-LP MICROPROCESSOR, PBGA452
STM1645-30 1625 MHz - 1665 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
STM6601CQ2BDM6F 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO12
STM706TDS6F 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STL51007X 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1300 nm Laser in Receptacle Package, Low Power
STL51N3LLH5 功能描述:MOSFET N-Ch 30V 0.0105 Ohm 51A STripFET V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STL52N25M5 功能描述:MOSFET N-CH 250V 28A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STL55NH3LL 功能描述:MOSFET N-channel 30 V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STL56N3LLH5 功能描述:MOSFET N-Channel 30V 15A 0.0076 Ohm STripFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube