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參數(shù)資料
| 型號： | STK401-210 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 3ch AF Power Amplifier(Split Power Supply) 10W+10W+10W,THD=0.4% |
| 中文描述： | 3通道自動對焦功率放大器（斯普利特電源）10W的10W的功率10W，總諧波失真\u003d 0.4％ |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 464K |
| 代理商： | STK401-210 |
External Circuit Diagram
Heat Radiation Design Considerations
The radiator thermal resistance
θc-a required for total substrate power dissipation Pd in the STK401-020 is determined as:
Condition 1: IC substrate temperature Tc not to exceed 125°C.
Pd x
θc-a+Ta <125°C (1)
where Ta is set assured ambient temperature.
Condition 2: Power transistor junction temperature Tj not to exceed 150°C.
Pd x
θc-a+Pd/N x θj-c+Ta<150°C(2)
where N is the number of power transistors and
θj-c is the thermal resistance per power transistor chip.
However, power transistor power consumption is Pd equally divided by N units.
Expressions (1) and (2) can be rewritten based on
θc-a to yield:
θc-a<(125–Ta)/Pd (1)'
θc-a<(150–Ta)/Pd–θj-c/N(2)'
The required radiator thermal resistance will satisfy both of these expressions.
From expressions (1)' and (2)', the required radiator thermal resistance can be determined once the following
specifications are known:
Supply voltage
VCC
Load resistance
RL
Assured ambient temperature
Ta
The total substrate power consumption when STK401-020 VCC is ±20 V and RL is 6 , for a continuous sine wave
signal, is a maximum of 27.5W (Fig. 1). In general, when this sort of continuous signal is used for estimation of power
consumption, the Pd used is 1/10th of PO max (slight variation depending on safety standard).
Pd=15.7W (1/10 PO max=during 1.5W)
No. 4341-6/9
STK401-020
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