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參數(shù)資料
| 型號(hào)： | STK12C68-IM |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CMOS nvSRAM 8K x 8 AutoStore Nonvolatile Static RAM Industrial Temperature/Military Screen |
| 中文描述： | 的CMOS非易失8K的× 8自動(dòng)存儲(chǔ)非易失性靜態(tài)RAM工業(yè)溫度/軍事屏幕 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 76K |
| 代理商： | STK12C68-IM |
49
STK12C68-IM
The cycle time used in Figure 2corresponds to the
length of time from the later of the last address transi-
tion or E going
LOW
to the earlier of E going
HIGH
or the
next address transition. W is assumed to be
HIGH
,
while the state of G does not matter. Additional current
is consumed when the address lines change state
while E is asserted. The cycle time used in Figure 3
corresponds to the length of time from the later of W or
E going
LOW
to the earlier of W or E going
HIGH
.
The overall average current drawn by the part depends
on the following items: 1)
CMOS
or TTL input levels; 2)
the time during which the chip is disabled (E
HIGH
); 3)
the cycle time for accesses (E
LOW
); 4) the ratio of
reads to writes; 5) the operating temperature; 6) the
V
CC
level; and 7) output load.
PREVENTING AUTOMATIC STORES
The AutoStorefunction can be disabled on the fly by
holding HSB
HIGH
with a driver capable of sourcing
15mA at a VOH of at least 2.2V as it will have to
overpower the internal pull-down device that drives
HSB low for 20
μ
s at the onset of an AutoStore.
When the STK12C68-IM is connected for
AutoStoreoperation (system V
CC
connected to V
CCX
and a 100uF capacitor on V
CAP
) and V
CC
crosses
V
SWITCH
on the way down, the STK12C68-IM will
attempt to pull HSB low; if HSB doesn't actually get
below V
IL
, the part will stop trying to pull HSB
LOW
and
abort the AutoStoreattempt.
LOW AVERAGE ACTIVE POWER
The STK12C68-IM has been designed to draw signifi-
cantly less power when E is
LOW
(chip enabled) but the
access cycle time is longer than 55ns. Figure 2below
shows the relationship between I
CC
and access times
for
READ
cycles. All remaining inputs are assumed to
cycle, and current consumption is given for all inputs at
CMOS
or TTL levels. Figure 3 shows the same relation-
ship for
WRITE
cycles. When E is
HIGH
, the chip
consumes only standby currents, and these plots do
not apply.
100
80
60
40
20
50
100
150
200
A
0
TTL
CMOS
Cycle Time (ns)
Figure 3
I
CC
(Max) Writes
100
80
60
40
20
50
100
150
200
A
0
TTL
CMOS
Cycle Time (ns)
Figure 2
I
CC
(Max) Reads
1
28
26
V
V
HSB
CAP
CCX
V
SS
14
0.1uF
100uF
+
Power
(optional)
nvSRAM
Note: Typical at 25
°
C
Figure 1
Schematic Diagram
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STK12C68-L35 | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-L351 | 制造商:Cypress Semiconductor 功能描述: |
| STK12C68-L35I | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-L45 | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-L45I | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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