參數(shù)資料
型號: STD95NH02L
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 24V - 0.0039ohm - 80A DPAK ULTRA LOW GATE CHARGE STripFET MOSFET
中文描述: N溝道24V的- 0.0039ohm - 80A條的DPAK超低MOSFET的柵極電荷STripFET
文件頁數(shù): 2/11頁
文件大?。?/td> 319K
代理商: STD95NH02L
STD95NH02L
2/11
Table 3: Absolute Maximum ratings
Symbol
V
spike
(1)
Drain-source Voltage Rating
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(*)
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(2)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
E
AS
(3)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(1) Garanted when external R
g
= 4.7
and t
f
< t
f
max.
(2) Pulse width limited by safe operating area.
(3) Starting T
j
= 25
°
C, I
D
= 40A, V
DD
= 22V
(*) Value limited by wires
Table 4: Thermal Data
Rthj-case
Rthj-amb
T
l
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5 V, I
D
=40 A
Parameter
Value
Unit
30
V
24
V
24
V
± 20
V
80
A
68
A
320
A
100
W
0.67
W/
°
C
600
mJ
-55 to 175
°
C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
1.5
100
275
°
C/W
°
C/W
°
C
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
24
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
10
μA
μA
V
GS
= ± 20V
±100
nA
1
V
V
GS
= 10 V, I
D
= 40 A
0.0039
0.0055
0.005
0.009
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