參數(shù)資料
型號(hào)： STD70NH02L
英文描述： N-CHANNEL 24V - 0.0062OHM - 60A - DPAK STRIPFET III POWER MOSFET
中文描述： N溝道24V的- 0.0062OHM -第60A條-的DPAK STRIPFET三功率MOSFET
文件頁數(shù)： 3/8頁
文件大小： 328K
代理商： STD70NH02L
3/8
STD70NH02L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
DYNAMIC
Symbol
g
fs
(3)
C
iss
C
oss
C
rss
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(5)
V
SD
(3)
t
rr
Q
rr
I
RRM
(*) Value Limited by Wire Bonding
1. Garanted when external R
g
= 4.7
and t
f
< t
f
max
2. Starting T
j
= 25°C, I
D
= 25A, V
DD
= 15V
3. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
4. Q
oss
= C
oss
*
V
in
, C
oss
= C
gd
+C
ds
. See Appendix A
5. Pulse width limited by safe operating area
6. Gate charge for Syncronous Operation
Parameter
Test Conditions
V
DS
= 10 V
,
I
D
= 30 A
V
DS
= 10V, f = 1 MHz, V
GS
= 0
Min.
Typ.
TBD
Max.
Unit
Forward Transconductance
S
Input Capacitance
2000
pF
Output Capacitance
420
pF
Reverse Transfer
Capacitance
Gate Input Resistance
210
pF
R
G
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1
Parameter
Test Conditions
V
DD
= 10V, I
D
= 30 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 10 V, I
D
= 60 A,
V
GS
= 10 V
Min.
Typ.
Max.
Unit
Turn-on Delay Time
TBD
ns
t
r
Rise Time
TBD
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
35
TBD
TBD
47
nC
nC
nC
Q
oss
(4)
Q
gls
(6)
Output Charge
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 0 V, V
GS
= 10 V
TBD
nC
Third-Quadrant Gate Charge
TBD
nC
Parameter
Test Conditions
V
DD
= 10 V, I
D
= 30 A,
R
G
= 4.7
,
V
GS
= 6.3 V
(see test circuit, Figure 3)
Min.
Typ.
TBD
TBD
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
60
A
Source-drain Current (pulsed)
240
A
Forward On Voltage
I
SD
= 30A, V
GS
= 0
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 30A, di/dt = 100A/μs,
V
DD
= 15V, T
j
= 150°C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
nC
A
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