參數(shù)資料
型號： STD6NF10T4
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 6A條（?。﹟對252AA
文件頁數(shù)： 3/10頁
文件大?。?/td> 171K
代理商： STD6NF10T4
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 50 V
R
G
= 50
(see test circuit, figure 3)
V
DD
= 80 V
R
G
= 50
(see test circuit, figure 5)
V
DD
= 80 V
I
D
= 3 A
V
GS
= 10 V
10
40
15
60
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 6 A
V
GS
= 10 V
280
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 6 A
V
GS
= 10 V
13
6
4
20
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 80 V
R
G
= 50
(see test circuit, figure 5)
I
D
= 6 A
V
GS
= 10 V
15
20
35
25
30
55
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
6
24
A
A
V
SD
(
)
t
rr
I
SD
= 6 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
C
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 6 A
V
DD
= 30 V
(see test circuit, figure 5)
85
0.25
6
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD6N10
3/10
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