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參數(shù)資料
| 型號(hào)： | STD40NF06LZ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.020 ohm - 40A DPAK Zener-Protected STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.020歐姆- 40A條的DPAK齊納二級(jí)保護(hù)STripFET⑩功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 296K |
| 代理商： | STD40NF06LZ |
1/8
October 2002
.
STD40NF06LZ
N-CHANNEL 60V - 0.020
- 40A DPAK
Zener-Protected STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.020
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE
I
LOGIC LEVEL GATE DRIVE
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
I
BUILT-IN ZENER DIODES TO IMPROVE ESD
PROTECTION UP TO 2kV
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less
critical
alignment
remarkable manufacturing reproducibility.
steps
therefore
a
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITOTS,
COMPUTER AND INDUSTRIAL
APPLICATION
I
WELDING EQUIPMENT
I
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
V
ESD(G-S)
Gate-source ESD(HBM-C=100pF, R=15k
)
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
TYPE
V
DSS
R
DS(on)
I
D
STD40NF06LZ
60 V
< 25 m
40 A
1
3
DPAK
TO-252
(Suffix “T4”)
(
)
Pulse width limited by safe operating area.
(1)
I
≤
40A, di/dt
≤
100A/μs, V
≤
V
(BR)DSS
, T
j
≤
T
JMAX
.
(2)
Starting T
j
= 25
o
C I
D
= 20A
V
DD
Parameter
Value
60
60
± 16
40
28
160
100
0.67
± 2.5
9
450
Unit
V
V
V
A
A
A
W
W/°C
kV
V/ns
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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|---|---|
| STD40NF06LZT4 | 功能描述:MOSFET N-Ch 60 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD40NF06T4 | 功能描述:MOSFET N-Ch 60 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD40NF10 | 功能描述:MOSFET AC Pwr switch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD40NF3LL | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 30V - 0.009ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET |
| STD40NF3LL_07 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 30V - 0.009ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET |
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