參數(shù)資料
型號(hào): STB6NB90
廠商: 意法半導(dǎo)體
英文描述: N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET
中文描述: ? -頻道900V - 1.7OHM - 5.8A -采用D2PAK PowerMESHO MOSFET的
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 48K
代理商: STB6NB90
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on delay Time
Rise Time
V
DD
= 450 V I
D
= 3 A
R
G
= 4.7
V
GS
= 10 V
20
15
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 720 V I
D
=6 A V
GS
= 10 V
40
10
18
55
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 720 V I
D
=6 A
R
G
= 4.7
V
GS
= 10 V
15
15
25
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
5.8
23
A
A
V
SD
(
)
t
rr
I
SD
= 5.8 A V
GS
= 0
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 6 A di/dt = 100 A/
μ
s
V
DD
= 100 V T
j
= 150
o
C
650
4.6
14
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STB6NB90
3/5
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