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參數(shù)資料
| 型號： | ST92T163N4B1L |
| 英文描述： | 8/16-BIT FULL SPEED USB MCU FOR COMPOSITE DEVICES WITH 16 ENDPOINTS. 20K ROM. 2K RAM. I 2 C. SCI. & MFT |
| 中文描述： | 16位產(chǎn)品全速USB微控制器，16終點復(fù)合設(shè)備。 20,000光盤。 2K的RAM。余2長脊髓損傷。 |
| 文件頁數(shù)： | 223/230頁 |
| 文件大?。?/td> | 2743K |
| 代理商： | ST92T163N4B1L |
223/230
ST92163 - GENERAL INFORMATION
10 GENERAL INFORMATION
10.1 EPROM/OTP PROGRAMMING
The 20 Kbytes of EPROM/OTP of the ST92E163/
ST92T163 may be programmed using the
EPROM programming boards available from
STMicroelectronics.
EPROM Erasing
The EPROM of the windowed package of the
ST92E163 can be erased by exposure to Ultra-Vi-
olet light.
The erasure characteristic of the ST92E163 is
such that erasure begins when the memory is ex-
posed to light with wave lengths shorter than ap-
proximately 4000. It should be noted that sunlight
and some types of fluorescent lamps have wave-
lengths in the range 3000-4000. It is recom-
mended to cover the window of the ST92E163
packages by an opaque label to prevent uninten-
tional erasure problems when testing the applica-
tion in such an environment.
The recommended erasure procedure of the
EPROM is the exposure to short wave ultraviolet
light which have a wave-length 2537. The inte-
grated dose (i.e. U.V. intensity x exposure time) for
erasure should be a minimum of 15W-sec/cm2.
The erasure time with this dosage is approximate-
ly 30 minutes using an ultraviolet lamp with a
12000 mW/cm2 power rating. The device should
be placed within 2.5 cm (1 inch) of the lamp tubes
during erasure.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST92T163R4T1 | 功能描述:8位微控制器 -MCU OTP EPROM 20K USB/I2 RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| ST92T196/JAP | 制造商:STMicroelectronics 功能描述: |
| ST92T96N9B1/AIN | 制造商:STMicroelectronics 功能描述: |
| ST-930 | 制造商:UNBRANDED 功能描述:MULTIMETER DIGITAL BARGRAPH |
| ST93003 | 功能描述:兩極晶體管 - BJT Hi Vltg FAST SWITCH PNP Pwr TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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