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參數(shù)資料
| 型號(hào)： | ST662ACN |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | MOSFET; Transistor Polarity:N Channel; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):No; Voltage Rating:30V |
| 中文描述： | DC - DC變換器從5V至12V，0.03A的閃存編程電源 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 131K |
| 代理商： | ST662ACN |
APPLICATIONCIRCUIT
Based on fast charge/discharge of capacitors,
this circuit involves high di/dt values limited only
by R
on
of switches. This implies a critical layout
design due to the need to minimize inductive
paths and place capacitors as close as possible
to the device.
A good layout design is strongly recommended
for noise reason. For best performance, use very
short connections to the capacitors and the
values shown in table 1.
C3 and C4 must have low ESR in order to
minimize the output ripple. Their values can be
reduced to 2
μ
F and 1
μ
F, respectively, when
using ceramic capacitors, but must be of 10
μ
F or
larger if aluminiumelectrolytic are chosen.
C5 must be placed as close to the device as
possible and could be omitted if very low output
noise performanceare not required.
Fig
4
and
Fig
5
show,
EVALUATION
kit
layout
electrical shematic.
respectively, our
and
the
relatively
Table 1:
List of Components
CAPACITOR
TYPE
VALUE (
μ
F)
Charge Pump C1
Ceramic
0.22
Charge Pump C2
Ceramic
0.22
Input C3
Electrolytic Tantalum
4.7
Output C4
Electrolytic Tantalum
4.7
Decoupling C5
Ceramic
0.1
Figure5:
Electrical Schematic
Figure4:
KIT Lay-out
ST662A
6/12
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST663 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 20A I(C) | TO-3 |
| ST664 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 20A I(C) | TO-3 |
| ST6-640 | 制造商:Carlo Gavazzi 功能描述: |
| ST664-A1 | 制造商:American ZETTLER Inc 功能描述: |
| ST665 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 20A I(C) | TO-3 |
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