參數(shù)資料
型號: ST662ACD
廠商: 意法半導體
英文描述: MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:8.5A; On-Resistance, Rds(on):22mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Leaded Process Compatible:Yes
中文描述: DC - DC變換器從5V至12V,0.03A的閃存編程電源
文件頁數(shù): 8/12頁
文件大?。?/td> 131K
代理商: ST662ACD
Table 2:
List of Components
CAPACITOR
TYPE
VALUE (
μ
F)
C1A
Ceramic
0.22
C2A
Ceramic
0.22
C1B
Ceramic
0.22
C2B
Ceramic
0.22
C3
Electrolytic Tantalum
10
C4
Electrolytic Tantalum
10
C5
Ceramic
0.22
Figure6:
ApplicationCircuit for Two ST662A in Parallel
HOW TO INCREASE OUTPUT CURRENT OR
OUTPUT VOLTAGE CAPABILITY
Current capability is limited by R
on
of internal
switches. It is possible to increase it connectingin
parallel two or more ST662A devices; each one
of them can supply 30mA. The figure 6 showsthe
electric schematic. The capacitors C3, C4 and C5
must be placed very close to the ICs on the
board. If this is not possible, you can place two
different capacitors, each of them of half value,
very close to the respectiveintegratedcircuit.
Fig. 8 show the Output Current capability of the
proposedcircuit.
If an output voltage greater than 12V is required,
it’s possible to realize the circuit of the following
diagram (figure 7). The relevant Output Current
capability is shown in figure 9 in which is shown
the output voltage vs load current.
ST662A
8/12
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