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| 型號： | ST650C22L1 |
| 英文描述： | THYRISTOR 1557A |
| 中文描述： | 晶閘管1557A |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 96K |
| 代理商： | ST650C22L1 |
ST650C..L Series
7
www.irf.com
Bulletin I25203 rev. B 04/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 11 - Gate Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
0 .00 1
0 .0 1
0.1
0 .00 1
0.0 1
0 .1
1
10
Square W ave Pulse Duration (s)
t
Steady State Value
R = 0.073 K/W
(Sin gle Side C oo le d)
R = 0.031 K/W
(Do uble Side Coo led)
(DC O peratio n)
T
ST650C ..L Se ries
0 .1
1
1 0
1 0 0
0 .0 01
0 .01
0 .1
1
10
1 00
VG D
IG D
(b)
(a)
T
°
C
T
°
C
T
°
C
(2)
(3)
Instantan eo us G ate C urren t (A)
I
a) Re com m e nded load line for
rated di/dt : 20V, 10ohm s; tr<=1 μs
b) Re co m m e nded load line for
<=30% rate d di/dt : 1 0V, 10o hm s
tr<=1 μs
Frequenc y Lim ite d by PG (AV )
(1)
(1) PG M = 10W , tp = 4m s
(2) PG M = 20W , tp = 2m s
(3) PG M = 40W , tp = 1m s
(4) PG M = 60W , tp = 0.66m s
Re ctangular gate pulse
ST6 50C..L Se rie s
(4)
100
1000
10000
0.5
1
1.5
2
2.5
3
I
Instantaneous On-state Voltage (V)
ST650C..L Series
T = 25
°
C
T = 125
°
C
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| ST662 | MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Leaded Process Compatible:No |
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