參數(shù)資料
型號: ST330S16P0
廠商: International Rectifier
英文描述: PHASE CONTROL THYRISTORS Stud Version
中文描述: 相位控制晶閘管螺柱版本
文件頁數(shù): 6/8頁
文件大?。?/td> 223K
代理商: ST330S16P0
Next Data Sheet
23
Parameter
ST330S
Units Conditions
Switching
t
q
Typical turn-off time
100
t
d
Typical delay time
1.0
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
r
1μs
T
J
= T
J
max, anode voltage
80%
V
DRM
Gate current A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25°C
I
TM
= 550A, T
J
= T
J
max, di/dt
= 40A/μs, V
R
= 50V
dv/dt
= 20V/μs, Gate 0V 100
,
t
p
= 500μs
1000
A/μs
μs
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
I
DRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/
μs
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST330S
Units Conditions
50
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
I
GM
+V
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
5ms
Maximum average gate power
2.0
Max. peak positive gate current
3.0
A
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40°C
T
J
= 25°C
to trigger
mA
T
J
= 125°C
V
GT
DC gate voltage required
T
J
= - 40°C
to trigger
V
T
J
= 25°C
T
J
= 125°C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST330S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
200
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
V
T
J
= T
J
max, t
p
5ms
To Order
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參數(shù)描述
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ST330S16P1L 制造商:IRF 制造商全稱:International Rectifier 功能描述:PHASE CONTROL THYRISTORS Stud Version
ST330S16P1PBF 制造商:Vishay Intertechnologies 功能描述:Thyristor,ST330S16P1 520A 1600V