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參數資料
| 型號： | ST330C18L2PBF |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 1230 A, 1800 V, SCR, TO-200AC |
| 封裝： | LEAD FREE, METAL, BPUK-4 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 161K |
| 代理商： | ST330C18L2PBF |
Document Number: 94408
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 16-Oct-08
3
ST330CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 650 A
Vishay High Power Products
Note
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TYP.
MAX.
Maximum peak gate power
PGM
TJ = TJ maximum, tp ≤ 5 ms
10.0
W
Maximum average gate power
PG(AV)
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp ≤ 5 ms
3.0
A
Maximum peak positive gate voltage
+ VGM
TJ = TJ maximum, tp ≤ 5 ms
20
V
Maximum peak negative gate voltage
- VGM
5.0
DC gate current required to trigger
IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
-
mA
TJ = 25 °C
100
200
TJ = 125 °C
50
-
DC gate voltage required to trigger
VGT
TJ = - 40 °C
2.5
-
V
TJ = 25 °C
1.8
3.0
TJ = 125 °C
1.1
-
DC gate current not to trigger
IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10
mA
DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to heatsink
RthJ-hs
DC operation single side cooled
0.11
K/W
DC operation double side cooled
0.06
Maximum thermal resistance, case to heatsink
RthC-hs
DC operation single side cooled
0.011
DC operation double side cooled
0.005
Mounting force, ± 10 %
9800
(1000)
N
(kg)
Approximate weight
250
g
Case style
See dimensions - link at the end of datasheet
TO-200AC (B-PUK)
ΔR
thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.012
0.010
0.008
TJ = TJ maximum
K/W
120°
0.014
0.015
0.014
90°
0.018
0.019
60°
0.026
0.027
0.028
30°
0.045
0.046
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ST330CLPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 650 A |
| ST330CLPBF_12 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 650 A |
| ST330CPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 720 A |
| ST330S | 制造商:LIUJING 制造商全稱:LIUJING 功能描述:可控硅、晶閘管 |
| ST330S04P0 | 功能描述:SCR 400 Volt 330 Amp RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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