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參數(shù)資料
| 型號(hào)： | ST303C08CEM0P |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 1180 A, 800 V, SCR, TO-200AB |
| 封裝： | LEAD FREE, CERAMIC, EPUK-3 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 317K |
| 代理商： | ST303C08CEM0P |
Document Number: 94374
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 25-Jul-08
3
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
Vishay High Power Products
Note
(1) tq = 10 to 20 s for 400 to 800 V devices; tq = 15 to 30 s for 1000 to 1200 V devices
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned on current
dI/dt
TJ = TJ maximum, VDRM = rated VDRM
ITM = 2 x dI/dt
1000
A/s
Typical delay time
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s
Resistive load, gate pulse: 10 V, 5
Ω source
0.83
s
Maximum turn-off time (1)
minimum
tq
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/s
VR = 50 V, tp = 500 s, dV/dt: See table in device code
10
maximum
30
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
500
V/s
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
TJ = TJ maximum, f = 50 Hz, d% = 50
60
W
Maximum average gate power
PG(AV)
10
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp ≤ 5 ms
10
A
Maximum peak positive gate voltage
+ VGM
20
V
Maximum peak negative gate voltage
- VGM
5
Maximum DC gate currrent required to trigger
IGT
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
200
mA
Maximum DC gate voltage required to trigger
VGT
3V
Maximum DC gate current not to trigger
IGD
TJ = TJ maximum, rated VDRM applied
20
mA
Maximum DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to heatsink
RthJ-hs
DC operation single side cooled
0.11
K/W
DC operation double side cooled
0.05
Maximum thermal resistance, case to heatsink
RthC-hs
DC operation single side cooled
0.011
DC operation double side cooled
0.005
Mounting force, ± 10 %
9800
(1000)
N
(kg)
Approximate weight
250
g
Case style
See dimensions - link at the end of datasheet
TO-200AC (B-PUK)
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