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參數(shù)資料
| 型號： | ST203S12PFJ0 |
| 英文描述： | Stratix II GX FPGA 90K FPGA-35 |
| 中文描述： | 1200伏第320逆變晶閘管采用TO - 209AB（到93）封裝 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 174K |
| 代理商： | ST203S12PFJ0 |
ST203C..C Series
Bulletin I25176 rev. B 04/00
www.irf.com
7
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
100
1000
10000
1
1.5
2
2.5
3
3.5
4
4.5
5
T = 25
°
C
I
Instantaneous On-state Voltage (V)
T = 125
°
C
ST203C..C Series
0 .0 01
0.01
0 .1
1
0 .00 1
0.0 1
0.1
1
10
Square W ave Pulse D uratio n (s)
t
T
ST203 C..C Series
Ste ady State Value
R = 0.1 7 K/W
(Single Side C oo led)
R = 0.0 8 K/W
(D ouble Side C oo led)
(D C O peration )
0
2 0
4 0
6 0
8 0
1 00
1 20
1 40
1 60
0
2 0
4 0
6 0
80
1 00
M
Rate Of Fall Of Forw ard C urre nt - d i/dt (A /μs)
I = 500 A
300 A
200 A
100 A
50 A
ST203C ..C Series
T = 125
°
C
0
50
100
150
200
250
0
20
40
60
80
100
I = 500 A
300 A
200 A
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/μs)
M
ST203C..C Series
T = 125
°
C
1 E1
1E1
1 E2
1 E3
1E4
50 Hz
400
2500
100
Pulse Basew idth (μs)
1000
1500
3000
200
500
5000
ST203C..C Series
Sinusoidal pulse
T = 55
°
C
Snubber circuit
R = 47 ohms
C = 0.22 μF
V = 80% V
s
DRM
tp
10000
1 E2
1 E3
1 E4
1 E1
1E2
1 E3
1 E4
1E4
50 Hz
400
2500
100
Pulse Base w idth (μs)
P
1000
1500
3000
200
500
5000
Snubber circuit
R = 47 ohms
C = 0.22 μF
V = 80% V
s
DRM
ST203C..C Series
Sinusoidal pulse
T = 40
°
C
tp
10000
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