參數(shù)資料
型號： ST1230C08K0LP
廠商： VISHAY INTERTECHNOLOGY INC
元件分類： 晶閘管
英文描述： 3200 A, 800 V, SCR
封裝： ROHS COMPLIANT, METAL, CASE A-24, K-PUK-2
文件頁數(shù)： 2/7頁
文件大?。?/td> 99K
代理商： ST1230C08K0LP
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 94395
2
Revision: 11-Aug-08
ST1230C..KP Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 1745 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at heatsink temperature
IT(AV)
180° conduction, half sine wave
double side (single side) cooled
1745 (700)
A
55 (85)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
3200
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
33 500
t = 8.3 ms
35 100
t = 10 ms
100 % VRRM
reapplied
28 200
t = 8.3 ms
29 500
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
5615
kA2s
t = 8.3 ms
5126
t = 10 ms
100 % VRRM
reapplied
3971
t = 8.3 ms
3625
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
56 150
kA2
√s
Low level value of threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.93
V
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV)), TJ = TJ maximum
1.02
Low level value of on-state slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.17
m
Ω
High level value of on-state slope resistance
rt2
(I >
π x I
T(AV)), TJ = TJ maximum
0.16
Maximum on-state voltage
VTM
Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.62
V
Maximum holding current
IH
TJ = 25 °C, anode supply 12 V resistive load
600
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Gate drive 20 V, 20
Ω, t
r ≤ 1 s
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
1000
A/s
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/s
Vd = 0.67 % VDRM, TJ = 25 °C
1.9
s
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s,
VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 Ω, tp = 500 s
200
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/s
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
100
mA
相關(guān)PDF資料
PDF描述
ST1230C08K0P 3200 A, 800 V, SCR
ST1230C08K1LP 3200 A, 800 V, SCR
ST1230C08K1P 3200 A, 800 V, SCR
ST1230C08K2LP 3200 A, 800 V, SCR
ST1230C08K2P 3200 A, 800 V, SCR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ST1230C08K0P 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A
ST1230C08K1 功能描述:SCR模塊 1745 Amp 800 Volt 3200 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK
ST1230C08K1LP 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A
ST1230C08K1P 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A
ST1230C08K2LP 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A
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