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參數(shù)資料
| 型號(hào)： | ST110S12P1LPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 175 A, 1200 V, SCR, TO-209AC |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, TO-94, 3 PIN |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 161K |
| 代理商： | ST110S12P1LPBF |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 94393
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 17-Aug-10
ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
110
A
90
°C
Maximum RMS on-state current
IT(RMS)
DC at 85 °C case temperature
175
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
2700
t = 8.3 ms
2830
t = 10 ms
100 % VRRM
reapplied
2270
t = 8.3 ms
2380
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
36.4
kA2s
t = 8.3 ms
33.2
t = 10 ms
100 % VRRM
reapplied
25.8
t = 8.3 ms
23.5
Maximum I2
t for fusing
I2
t
t = 0.1 to 10 ms, no voltage reapplied
364
kA2
s
Low level value of threshold voltage
VT(TO)1
(16.7 % x
x I
T(AV) < I < x IT(AV)), TJ = TJ maximum
0.90
V
High level value of threshold voltage
VT(TO)2
(I >
x I
T(AV)), TJ = TJ maximum
0.92
Low level value of on-state slope resistance
rt1
(16.7 % x
x I
T(AV) < I < x IT(AV)), TJ = TJ maximum
1.79
m
High level value of on-state slope resistance
rt2
(I >
x I
T(AV)), TJ = TJ maximum
1.81
Maximum on-state voltage
VTM
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.52
V
Maximum holding current
IH
TJ = 25 °C, anode supply 12 V resistive load
600
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Gate drive 20 V, 20
, t
r 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
500
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
2.0
μs
Typical turn-off time
tq
ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
20
mA
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PDF描述 |
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| ST110S12P1PBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P1VLPBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P2LPBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P2PBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P2VLPBF | 175 A, 1200 V, SCR, TO-209AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST110S12P1PBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S12P1V | 功能描述:SCR 110 Amp 1200 Volt 175 Amp IT(RMS) RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| ST110S12P1VL | 制造商:n/a 功能描述:Power SCR |
| ST110S12P1VLPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S12P1VPBF | 制造商:Vishay Intertechnologies 功能描述:Thyristor,ST110S12P1V 175A 1200V |
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