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參數(shù)資料
| 型號： | ST110S12P0VLPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 175 A, 1200 V, SCR, TO-209AC |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-94, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 161K |
| 代理商： | ST110S12P0VLPBF |
Document Number: 94393
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 17-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TYP.
MAX.
Maximum peak gate power
PGM
TJ = TJ maximum, tp 5 ms
5
W
Maximum average gate power
PG(AV)
TJ = TJ maximum, f = 50 Hz, d% = 50
1
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp 5 ms
2.0
A
Maximum peak positive gate voltage
+ VGM
20
V
Maximum peak negative gate voltage
- VGM
5.0
DC gate current required to trigger
IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
180
-
mA
TJ = 25 °C
90
150
TJ = 125 °C
40
-
DC gate voltage required to trigger
VGT
TJ = - 40 °C
2.9
-
V
TJ = 25 °C
1.8
3.0
TJ = 125 °C
1.2
-
DC gate current not to trigger
IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10
mA
DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.195
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
Mounting torque, ± 10 %
Non-lubricated threads
15.5 (137)
Nm
(lbf in)
Lubricated threads
14 (120)
Approximate weight
130
g
Case style
See dimensions - link at the end of datasheet
TO-209AC (TO-94)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ST110S12P1LPBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P1PBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P1VLPBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P2LPBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P2PBF | 175 A, 1200 V, SCR, TO-209AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST110S12P0VPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S12P1 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST110S12P1LPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S12P1PBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S12P1V | 功能描述:SCR 110 Amp 1200 Volt 175 Amp IT(RMS) RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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