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參數(shù)資料
| 型號： | SS22-E3/2CT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | SS22-E3/2CT |
Document Number 88748
07-Jul-06
www.vishay.com
3
SS22 thru SS26
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Current Characteristics
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
50
Tj = 150 °C
Tj = 125 °C
Tj = 25 °C
SS22 - SS24
SS25 & SS26
Pulse Width = 300 s
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
SS22 - SS24
SS25 & SS26
TA = 125 °C
TA = 25 °C
TA = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
Figure 5. Typical Junction Capacitance
10
100
500
0.1
1
10
100
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
SS22 - SS24
SS25 & SS26
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
DO-214AA (SMB)
0 (0)
Cathode Band
0.085 MAX.
(2.159 MAX.)
0.220 REF
0.086 MIN.
(2.18 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SS24-E3/55T | 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS26-E3/5T | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS26 | 2 A, 60 V, SILICON, RECTIFIER DIODE |
| SS3P4LHG3/86A | 3 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS3P4LHG3/87A | 3 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
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參數(shù)描述 |
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